PMBT3906M,315 Allicdata Electronics
Allicdata Part #:

1727-2157-2-ND

Manufacturer Part#:

PMBT3906M,315

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 40V 0.2A SOT883
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 590m...
DataSheet: PMBT3906M,315 datasheetPMBT3906M,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02109
30000 +: $ 0.01985
50000 +: $ 0.01861
100000 +: $ 0.01650
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 590mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Base Part Number: PMBT3906
Description

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The PMBT3906M,315 is a small signal single transistor that belongs to the Bipolar Junction Transistors (BJT) family. It is designed to be used in amplification circuits and switching applications where power dissipation is a major concern. The common-base configuration of the PMBT3906M,315 provides high current gain with excellent temperature variations.

It is a PNP-type transistor, so its collector is connected to the power supply, the base is connected to the signal source, and the emitter is connected to the load. This transistor can handle a maximum collector current of 0.15A and an avalanche energy of 6 W.

The PMBT3906M,315 works on a low-power design, as it is commonly used in low-power application fields such as automotive, telecommunications, and industrial applications. Its conduction and reverse breakdown characteristics make it suitable for use in current controlled or voltage controlled switching systems. Additionally, it has a wide voltage range (1V to 500V) and a low collector-to-emitter saturation voltage (VCE(sat) of 0.2V), making it a highly efficient device.

The PMBT3906M,315 provides excellent signal control with its low-noise, high frequency, and high-voltage characteristics. Due to its low noise figure and fast response time, it is convenient for signal processing which is mainly used in the automotive, medical, and audio applications. The PMBT3906M,315 also works as an amplifier in operational amplifiers, low-level amplifiers, transconductance amplifiers, and wide-bandwidth buffers. Additionally, its high-speed, high-current gain characteristics make it suitable for us in high-frequency driver applications.

Due to its low-power design, the PMBT3906M,315 can be used in many energy-critical applications. Its low-power features make it suitable for use in power supply and battery-operated applications. Moreover, it is capable of operating up to 100 MHz and is used in frequency dividers, clock generators, and high-speed communication links.

In conclusion, the PMBT3906M,315 is a versatile transistor that is suitable for a wide variety of applications due to its excellent signal control, low power design, and wide voltage range. It can be used in high-frequency, low-noise applications as well as in low-power, battery-operated devices. With its excellent temperature variations and high current gain, the PMBT3906M,315 is an efficient device that can be used in many applications.

The specific data is subject to PDF, and the above content is for reference

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