PMBT5401,215 Allicdata Electronics
Allicdata Part #:

PMBT5401,215-ND

Manufacturer Part#:

PMBT5401,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PNP 150V 0.3A SOT23
More Detail: Bipolar (BJT) Transistor PNP 150V 300mA 300MHz 250...
DataSheet: PMBT5401,215 datasheetPMBT5401,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Description

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Introduction

PMBT5401,215 is a PNP Bipolar Junction Transistor (BJT) with a maximum current collector rating of -1 A and a maximum voltage collector of -100 V. This device is primarily a switch and is used in applications requiring high current gain and low switching times such as in DC/DC converters and power supplies. This article will discuss the application field and working principle of PMBT5401,215.

Application Field

PMBT5401,215 is ideally suited for DC/DC converters and power supplies. It is well-suited for applications where high-current gain and low-switching times are desired, such as for driving a motor, for switching a load, or for providing power buffer for high frequency applications. It can be used in high power wide-bandwidth applications where speed and current gain are both required. It can also be used in audio amplifiers, battery chargers and other high frequency RF or high current applications.

Working Principle

The PMBT5401,215 is a PNP Bipolar Junction Transistor. It has two input terminals, a base and an emitter, and an output terminal, the collector. When a voltage is applied to the base, electrons are attracted to the emitter and collected by the collector. This increases the current in the collector, thus amplifying the input signal. The number of electrons collected by the collector is a function of the current gain of the device, which is the ratio of the output current to the input current.

The PMBT5401,215 has a low leakage current, allowing it to be used in high power applications. It is also known for its high level of reliability and stability, and its low distortion. Its low base resistance performance allows for greater flexibility in the design of the circuit, and helps to reduce power consumption. The PMBT5401,215 also has high frequency operation and switching, making it ideal for applications requiring high power, wide-bandwidth and fast response times.

Conclusion

The PMBT5401,215 is a PNP Bipolar Junction Transistor that can be used in applications requiring high current gain and low switching times. It has a low leakage current, high level of reliability and stability, and low distortions. It can be used in DC/DC converters, power supplies, audio amplifiers, battery chargers and other high frequency RF or high current applications. The working principle of this device is that when a voltage is applied to the base, electrons are attracted to the emitter and collected by the collector, thus amplifying the signal.

The specific data is subject to PDF, and the above content is for reference

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