Allicdata Part #: | PMEM4010ND,115-ND |
Manufacturer Part#: |
PMEM4010ND,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 40V 1A 6TSOP |
More Detail: | Bipolar (BJT) Transistor NPN + Diode (Isolated) 40... |
DataSheet: | PMEM4010ND,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN + Diode (Isolated) |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 210mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 500mA, 5V |
Power - Max: | 600mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | PMEM4010N |
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The PMEM4010ND/115 is a single, bipolar junction transistor (BJT). It is a high voltage (400V) part designed for applications such as audio amplifiers, power supplies, and motor control circuits. This device has a maximum collector current of 4A and an operating frequency range of up to 10MHz.
A BJT is a three-terminal semiconductor device made from two closely-coupled P- and N-type materials. When a current is applied to the base of the transistor, it creates a field effect which causes the N-type material to become more electrically conductive. This, in turn, enables a larger amount of current to flow through the collector-emitter circuit. This effect is known as "amplification".
The PMEM4010ND/115 is a PNP BJT, meaning it is best suited for such applications as audio amplifiers and signal switches.The DC current gain of the transistor can be varied by changing the operating point using the base current. This is known as the "beta" of the transistor, which has a typical value of 130 for the PMEM4010ND/115. This allows the transistor to be used in a wide range of applications, including switching, audio amplification, and power supply regulation circuits.
In terms of its physical characteristics, the PMEM4010ND/115 is a hermetically sealed, molded package designed to withstand up to 400V of reverse voltage. The transistor is also rated for up to 4A of collector current, meaning it can be used for applications requiring high power operation. Furthermore, the transistor is designed with an integral diode which protects it from reverse voltage effects.
The PMEM4010ND/115 has also been designed with thermal protection features in order to reduce the risk of thermal runaway during high-power operations. The device also has a maximum operating temperature of 150°C.
In summary, the PMEM4010ND/115 is a single, bipolar junction transistor (BJT) which is rated for up to 400V of reverse voltage and 4A of collector current. It is suitable for applications such as audio amplifiers, power supplies, and motor control circuits, and is also designed with advanced thermal protection features.
The specific data is subject to PDF, and the above content is for reference
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