PMEM4030NS,115 Allicdata Electronics
Allicdata Part #:

PMEM4030NS,115-ND

Manufacturer Part#:

PMEM4030NS,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 50V 2A SOT96-1
More Detail: Bipolar (BJT) Transistor NPN + Diode (Isolated) 50...
DataSheet: PMEM4030NS,115 datasheetPMEM4030NS,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN + Diode (Isolated)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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Transistors, and in particular Bipolar Junction Transistors (BJT), are electronic components that can be used to control the flow of electrical current in a variety of circuits. A specific type of transistor, PMEM4030NS, is commonly used in applications such as automotive electronics, high-speed computing, and other high-power applications. This article will discuss the application fields and working principles of PMEM4030NS, giving an overview of the device and its use in different applications.

PMEM4030NS is a NPN Bi-polar Junction Transistor (BJT) used mainly in high frequency and high current applications. It is made up of three layers of semiconductor material which act as the base, collector and emitter of the transistor. The device is designed to have a high voltage gain and low input current, making it well-suited for a range of applications. This includes high-frequency switching, high current amplification, and pulse shaping circuits. The device also features a relatively low saturation voltage, allowing for the use of electromobility devices.

The PMEM4030NS is most commonly used in automotive electronics such as power management circuits and anti-theft systems. It is popular due to its low saturation voltage, high power dissipation, and high switching speed. The device also provides superior reliability in these applications, due to its proven reliability in the automotive environment. In addition, it is widely used in power switching applications, such as in power supplies, DC-DC converters, and LED lighting systems.

PMEM4030NS is also popular in high-speed computing applications, particularly in data processing, signal generation, and memory control. The high speed and low signal loss of the device makes it ideal for high-speed logic operations, enabling designs to be optimized for maximum performance. Also, the transistor can be used to create custom logic functions, allowing logic designers to achieve the desired performance while minimizing the complexity of the circuit.

Apart from these applications, PMEM4030NS can also be used in audio systems, radio frequency systems, and instrumentation applications. Its high-current and low-saturation-voltage design makes it ideal for these applications, allowing for more complex signal processing and control. Also, these devices can be used in active filters, voltage regulators, power amplifiers, and other applications to achieve higher levels of performance.

The working principle of PMEM4030NS involves the flow of electrons from the base to the collector and from the collector to the emitter. This process is known as the biasing effect and is used to control the amount of current allowed to pass through the device. The current flow is controlled by the current gain of the device, which is a measure of how efficiently the transistor can amplify or block the current. As the current through the transistor increases or decreases, the voltage level of the collector will also change, resulting in a predictable output voltage.

In summary, PMEM4030NS is an NPN Bi-polar Junction Transistor used in applications such as automotive electronics, high frequency computing, and others. Its unique characteristics, including its high voltage gain and low input current, make it well suited for a wide range of applications. Additionally, its low saturation voltage allows it to be used in electromobility devices. The working principle of the device is centered on the biasing effect, which is used to control the flow of electrons between the base, collector, and emitter. This allows the device to be used in a variety of circuits, making it a useful component for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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