Allicdata Part #: | PMEM4030PS,115-ND |
Manufacturer Part#: |
PMEM4030PS,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PNP 50V 2A SOT96-1 |
More Detail: | Bipolar (BJT) Transistor PNP + Diode (Isolated) 50... |
DataSheet: | PMEM4030PS,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP + Diode (Isolated) |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 390mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 2V |
Power - Max: | 1W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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Transistors – Bipolar (BJT) – Single
The PMEM4030PS,115 is a NPN transistor manufactured primarily by Fairchild Semiconductor. It belongs to the family of single, bipolar transistors and is mainly used in radio-frequency (RF) amplification and switching operations. This particular model has an up to 40 volt collector-base voltage and up to 30 watt power dissipation.
Features of PMEM4030PS,115
- Collector Current: 100 mA
- PTOT (Power Dissipation): 30 watts
- ZTYP (Typical Impedance): 10 ohms
- Ft (Current Gain Frequency): 1000 MHz
- ft (Transition Frequency): 8000 MHz
- RoHS Compliant
Applications of PMEM4030PS,115
The PMEM4030PS,115 transistor has wide applicability in various electronic devices, such as:
- RF power amplifiers
- Power switching applications
- Output stages for audio amplifiers
- DC-DC converters
- Battery-operated circuits
- Switch-mode converters
Working Principle of PMEM4030PS,115
The PMEM4030PS,115 is a bipolar transistor and works on the principles of emitter-base junction, collector-base junction and collector-emitter junction. This means that the transistor has three terminals, namely emitter (E), base (B) and collector (C). It operates by controlling the current flow through the base terminal by connecting it to the emitter. This current flow in the base produces a voltage potential across the collector-base junction. Therefore, the current flow from the collector to the emitter is directly proportional to the current flow in the base.
In addition, if the voltage potential at the base (VBE) is more than that at the collector (VCE), the collector current (Ic) reduces drastically. Therefore, this particular transistor has a maximum safe VBE and VCE that must be kept within specified limits. Also, it has very good gain bandwidth properties.
Conclusion
The PMEM4030PS,115 is a NPN transistor manufactured primarily by Fairchild Semiconductor and is generally used in radio frequency (RF) amplification and switching operations. It features a maximum collector-base voltage of up to 40V and a maximum power dissipation of up to 30W. It is used in various applications such as RF power amplifiers, power switching applications, DC-DC converters, switch mode converters, etc. The PMEM4030PS,115 transistor operates by controlling the current flow through the base terminal by connecting it to the emitter. It has good gain bandwidth properties and must not exceed the specified VBE and VCE values.
The specific data is subject to PDF, and the above content is for reference
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