PMEM4020ND,115

PMEM4020ND, 115 Application Field and Working Principle

The PMEM4020ND, 115 is a P-channel enhancement-mode MOSFET (metal-oxide-semiconductor field-effect transistor) with low threshold voltage and high avalanche voltage. It can be used as a switch in a wide range of applications because of its low on-resistance and low gate threshold voltage. This product is designed for high-temperature applications, with a maximum junction temperature of 150°C. The maximum power dissipation of the device is 2.4 W and the maximum current carrying capacity is 115 A. It is available in a TO-220 package.

Application fields

The PMEM4020ND, 115 is used in a variety of applications including power management, displays, telecommunications, automotive, inverters, and electric vehicles. It is used as a switch for power management in mobile phones, for example, to turn off and on the power to various components. In automotive applications, it is used to control the voltage to the electric motors of hybrid and electric vehicles. It also has applications in displays, where it can be used to control the voltage to the display panels. In inverters, it is used to control the voltage of the output current.

Working principle

The PMEM4020ND, 115 has three terminals - gate, source, and drain. The gate terminal is used to apply a voltage, which in turn alters the electric potential of the source and the drain. This alters the electron flow between the source and drain, allowing current to flow or stop. When the gate voltage is below the threshold voltage, the transistor is off and no current flows. When the gate voltage is above the threshold voltage, the transistor is on and current flows. The threshold voltage is determined by the construction of the transistor, and varies from device to device.

The PMEM4020ND, 115 is an enhancement mode transistor, which means that it requires a positive voltage on the gate terminal in order to switch on. When the gate voltage is below the threshold voltage, the gate-source channel is off and no current can flow between the source and drain terminals. When the gate voltage is above the threshold voltage, the gate-source channel is on and current can flow between the source and drain terminals.

When the gate voltage is below the threshold voltage, the gate-source channel is off. To switch the transistor on, a voltage must be applied to the gate terminal higher than the threshold voltage. The threshold voltage of the PMEM4020ND, 115 is 1 V, so a voltage higher than 1 V must be applied to the gate terminal in order to switch the transistor on. When the gate voltage is above the threshold voltage, the gate-source channel is on and current can flow between the source and drain terminals.

Conclusion

The PMEM4020ND, 115 is a P-channel enhancement-mode MOSFET which is designed for high-temperature applications with a maximum junction temperature of 150°C. It can be used as a switch in a wide range of applications because of its low on-resistance and low gate threshold voltage. It has applications in power management, displays, telecommunications, automotive, inverters, and electric vehicles. It works by applying a voltage to the gate terminal, which in turn alters the electric potential of the source and drain terminals. When the gate voltage is above the threshold voltage, the transistor is on and current can flow through it.