PMEM4020PD,115 Allicdata Electronics
Allicdata Part #:

PMEM4020PD,115-ND

Manufacturer Part#:

PMEM4020PD,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PNP 40V 0.75A 6TSOP
More Detail: Bipolar (BJT) Transistor PNP + Diode (Isolated) 40...
DataSheet: PMEM4020PD,115 datasheetPMEM4020PD,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP + Diode (Isolated)
Current - Collector (Ic) (Max): 750mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Power - Max: 600mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Description

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Transistors are an important part of many electronic circuits, as they are responsible for amplifying and switching signals between components. Bipolar junction transistors (BJTs) are the most commonly used type of transistor, and the PMEM4020PD115 is an example of these devices. This article will discuss the application field and working principles of the PMEM4020PD115, as well as provide a comparison between this device and other similar BJTs.

Description of the PMEM4020PD115

The PMEM4020PD115 is a Bipolar Junction Transistor (BJT). It is a discrete, two terminal, three layer device that is made up of a P-type base, an N-type collector, and an N-type emitter. The PMEM4020PD115 is a PNP transistor, which means that current flow is from the collector to the emitter when the base voltage is positive. This also implies that the collector has a positive and the emitter has a negative voltage with respect to their respective bases.

The PMEM4020PD115 has a maximum current gain of 40. This means that the ratio of the collector current to the emitter current is 40. For example, if an emitter current of 1mA is applied, the collector current will be 40mA. The PMEM4020PD115 also has a maximum collector-emitter voltage rating of 115V, which indicates the maximum voltage that can be applied across the collector and emitter without damaging the device.

Application Field

The PMEM4020PD115 is a versatile device and can be used in a wide range of applications. Due to its high current gain, it is typically used in amplifying and switching circuits. It can also be used in power circuits, such as DC-DC converters and power amplifiers. The high voltage rating of the PMEM4020PD115 allows it to be used in high power circuits, such as motor control and power supply circuits.

The PMEM4020PD115 is also used in audio circuits, such as tone controls, level controls and amplifiers. It is particularly useful in audio circuits because it has a high current gain, which means it can produce a large output signal with a small input signal. additionally, the high voltage rating of the PMEM4020PD115 makes it ideal for power amplifiers, which require large amounts of power.

Working Principle

The working principle of the PMEM4020PD115 is the same as any other BJT. When a voltage is applied to the base of the transistor, current flows between the collector and emitter. This current is regulated by the current gain of the transistor, which is determined by the ratio of collector current to emitter current. The higher the current gain, the greater the current that can be produced with a given input. The PMEM4020PD115 has a current gain of 40, which means it can produce a high output current with a relatively low input current.

The voltage rating of the PMEM4020PD115 is also important, as it determines the maximum voltage that can be applied across the collector and emitter without damaging the device. The PMEM4020PD115 has a voltage rating of 115V, which indicates that it can withstand a large amount of voltage without breaking down. This makes it ideal for power circuits where high voltage levels are encountered.

Comparison with other BJTs

The PMEM4020PD115 is a PNP transistor, which means that it has a negative voltage at the collector and a positive voltage at the emitter. There are also NPN transistors, which have the opposite voltage polarity at the collector and emitter. PNP transistors generally have higher current gain than NPN transistors, which makes them more suitable for amplifying and switching circuits.

The PMEM4020PD115 also has a higher voltage rating than many other BJTs. This makes it well suited to power circuits, as it can withstand high voltage levels without breaking down. Additionally, it has a current gain of 40, which is higher than many other BJTs. This makes it an ideal choice for circuits where a high output current is required.

Conclusion

The PMEM4020PD115 is a Bipolar Junction Transistor (BJT) that is suitable for amplifying and switching circuits. It has a current gain of 40, which means that it can produce a high output current with a relatively low input current. Additionally, the PMEM4020PD115 has a voltage rating of 115V, which makes it ideal for power circuits. Compared to other BJTs, the PMEM4020PD115 has a higher current gain and a higher voltage rating, making it an ideal choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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