PMF3800SN,115

Vgs(th) (Max) @ Id:	3.3V @ 1mA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	560mW (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	40pF @ 10V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	0.85nC @ 10V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	4.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	260mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to PMF3800SN, 115

PMF3800SN, 115 is a type of field effect transistor (FET). This transistor belongs to the class of single MOSFETs and is typically used in various electronic circuits. FETs are a type of transistor frequently employed in electronic amplifier circuits and other signals processing systems. In this article, we will discuss the application field and working principle of PMF3800SN, 115.

What is a MOSFET?

MOSFET (metal-oxide semiconductor field-effect transistor) is a type of transistor used in various electronic circuits. MOSFETs comprise of two terminals and three main components, which are channel, gate, and source/drain. These components are fabricated using different materials, insulators, and semiconductor materials. When voltage is applied to the gate terminal, it controls the flow of current in the channel and regulates the voltage levels at source and drain.

Application Field of PMF3800SN, 115

PMF3800SN, 115 is a type of MOSFET with low to medium on-state drain current and a low input capacitance. This MOSFET is mainly used for switching operations, audio amplifiers, and voltage regulator circuits. It is also suitable for applications of video signal amplification and pulse modulation.

Working Principle of PMF3800SN, 115

The basic electrical properties of PMF3800SN, 115 are determined by its gate threshold voltage (VGS) and drain-source on resistance. When the gate voltage is below the threshold voltage, the device remains in cut-off region and it does not allow any current to flow from source to drain. When the gate voltage rises above the threshold voltage, the device enters into an active region, allowing current to freely flow from source to drain.PMF3800SN, 115 can be operated in both enhancement and depletion modes. In enhancement mode, when the applied gate voltage increases, the device becomes highly conductive. In depletion mode, when the gate voltage decreases, the channel becomes less conductive. This MOSFET has an off-state channel leakage current which is operated in normal limits (Ieffux > Ieffuxmax).

Conclusion

PMF3800SN, 115 is a type of single MOSFET. It is mainly used for switching operations and audio amplifiers circuits, and it is also suitable for video signal amplification and pulse modulation. The working principle of this MOSFET is determined by its gate threshold voltage and drain-source on resistance. It can be operated in both enhancement and depletion modes. We have discussed the application field and working principle of PMF3800SN, 115 in this article.

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