PMFPB6545UP,115 Allicdata Electronics
Allicdata Part #:

568-6532-2-ND

Manufacturer Part#:

PMFPB6545UP,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET P-CH 20V 3.5A SOT1118
More Detail: P-Channel 20V 3.5A (Ta) 520mW (Ta), 8.3W (Tc) Surf...
DataSheet: PMFPB6545UP,115 datasheetPMFPB6545UP,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520mW (Ta), 8.3W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 70 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A PMFPB6545UP,115 is an enhancement mode Power MOSFET, which is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a high voltage, standard drain-source on-state resistance and low gate-source threshold voltage MOSFET capable of operating up to a maximum of 15 volts. The MOSFET can be used as either a switch or a linear amplifier, depending on the application and device parameters.

The MOSFET is composed of four terminals, the Gate, Drain, Source, and Body terminals. The Gate terminal is connected to a control voltage, whose purpose is to control the flow of current between the Source and Drain sides of the circuit. The Drain, Source, and Body terminals are all connected to metallic contact points through which current flows.

The operation of the MOSFET is based on the principles of electrostatics. When the Gate terminal is charged, a potential difference is created between the Source and Drain sides of the circuit. This causes an electric field to build up in the region between the Source and Drain terminals, and this in turn causes the electrodes (or contacts) of the Source and Drain terminals to pull electrons from one side of the circuit to the other.

The current flow between the voltage source and the drain side is controlled by the Gate terminal, as it is here that the potential between the source and drain is adjusted. Generally speaking, the higher the voltage applied at the Gate terminal, the more current is permitted to flow between the source and drain. This can be used to control the voltage and current flowing across the circuit.

In terms of applications, the PMFPB6545UP,115 can be used for a variety of purposes, including motor drivers, LED drivers, power supply management, and full bridge circuits. Additionally, it can be utilized in high-side/low-side switch circuits and within DC-DC converters. It is well-suited to domestic appliance applications, given its low capacitance, low on-state resistance, and compact physical size.

The versatility of the PMFPB6545UP,115 makes it an ideal choice for a wide range of applications where high voltage, low gate threshold voltage, and efficient switching is required. It can replace large FETs and small BJTs devices, and its small package size allows for greater design flexibility. In summary, the PMFPB6545UP,115 is a high voltage and low gate threshold voltage MOSFET, suitable for a wide range of applications where efficient switching and low on-state resistance are required.

The specific data is subject to PDF, and the above content is for reference

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