PMN16XNEX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PMN16XNEX is a high power, high frequency, low-cost power metal nitride (PMN) transistor. It is a field effect transistor, more specifically a metal oxide semiconductor field effect transistor (MOSFET). This device is used in applications that require a high switching frequency and reliable operation.

The PMN16XNEX is a single-channel, N-channel enhancement type MOSFET. It is designed for logic level gate drive and is capable of operating within a wide range of operating voltages and gate capacitance values. This makes it ideal for high power applications where high switching frequencies and robust performance are required. It is especially suited for high frequency application such as radio frequency amplifiers, power converters and power amplifiers.

The working principle of the PMN16XNEX is based on Metal Oxide Semiconductors, which rely on a thin layer of silicon dioxide (SiO2) that exists between a metal gate and a semiconductor material. It is this interface between the metal gate and the semiconductor material that allows current to flow when the voltage applied to the gate is sufficient. When the gate voltage is decreased, the current flow is also decreased. This is known as the field effect.

The PMN16XNEX has a gate threshold voltage of -0.45 V at 25 °C, which means it requires a voltage of around -0.45 V at 25 °C for the N-Channel to turn on. In addition, the PMN16XNEX has an intrinsic voltage breakdown rating of 35 V with a drain current of 2.5 A. This allows it to be used in applications that require higher voltages.

The PMN16XNEX is also capable of a high “on” resistance which means it is less susceptible to being damaged due to high current. It also has a low gate-to-drain capacitance, which gives it a faster turn-on and turn-off time. This makes it ideal for high-frequency applications.

In summary, the PMN16XNEX is an excellent choice for high power, high frequency applications. It has a wide range of operating Voltages and gate capacitance values, enabling it to be used in a variety of applications. The device is able to provide high switching frequencies and reliable performance, making it ideal for a variety of power applications. Additionally, the PMN16XNEX has a low gate-to-drain capacitance and high on resistance, providing excellent performance characteristics in high-frequency and high power applications. This makes the PMN16XNEX the perfect choice for a variety of applications requiring reliability and high performance characteristics.

The specific data is subject to PDF, and the above content is for reference