PMN15UN,115 Allicdata Electronics
Allicdata Part #:

568-10795-2-ND

Manufacturer Part#:

PMN15UN,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 30V 8A SC-74
More Detail: N-Channel 30V 8A (Tc) Surface Mount 6-TSOP
DataSheet: PMN15UN,115 datasheetPMN15UN,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PMN15UN is a metal oxide semiconductor field effect transistor (MOSFET) used for power applications. It is a single device package composed of three electrodes (source, drain, gate) contained within a MOSFET housing. The device is designed for higher power capability and lower loss compared to other devices of similar size. The PMN15UN is produced in a variety of sizes, ranging from low-power to high-power—from 8V to 200V.The MOSFET is one of the most popular types of power transistor available today. The MOSFET is distinct from other transistors in the way it works and in the electrical characteristics it exhibits. In contrast to bipolar transistors, which act as switch or current amplifiers, the MOSFET works primarily as an electrically controlled switch, allowing for greater power efficiency and decreased power loss in a given application. Furthermore, the MOSFET’s ability to be accurately controlled makes it an excellent choice for high-frequency switching applications. The MOSFET is classified as a type of field-effect transistor (FET). It is composed of four parts, two of which are the source and drain terminal. These terminals are connected to a doped semiconductor layer on a substrate. The other two parts are the gate and the channel. The presence of an electric field between the gate and channel controls the current flow through the source and drain, enabling the device to act as an electronically controlled switch on and off. This type of transistor is best suited for performing high frequency switching jobs where power reducing, current limiting or line protection are necessary. The PMN15UN MOSFET, in particular, is a popular choice for these applications because of its ability to deliver moderate current and high voltage with a good on-off ratio. The device is commonly used in Bridge Rectifiers, Continuous current limiting and Clamp circuits. In addition, the PMN15UN device is also suitable for other applications such as voltage regulators, switching power supplies, motor drives, and automotive power switching and control. The PMN15UN offers several advantages over other types of transistors. For example, it is less subject to leakage and it has a higher saturation voltage than other transistors. It also has a higher breakdown voltage and offers greater immunity to voltage spikes than other transistors. In addition, the PMN15UN offers a high channel transconductance and low on-resistance compared to similar devices. Lastly, the PMN15UN is easier to design with due to its relatively simple layout.In conclusion, the PMN15UN MOSFET is an excellent choice for high power, high frequency switching and current limiting applications. Its ability to handle high voltages and its immunity to voltage spikes makes it an ideal choice for various types of power switching, protection and control applications. Its high breakdown and saturation voltage, low on-resistance, and other advantages make it attractive for those needing power efficiency, reliability, and a simple design. With the PMN15UN, a wide range of applications can now be enabled with less energy loss.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PMN1" Included word is 8
Part Number Manufacturer Price Quantity Description
PMN120ENEX Nexperia USA... 0.08 $ 6000 MOSFET N-CH 60V 3.1A 6TSO...
PMN15UN,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 8A SC-74N...
PMN1-4R-3K Panduit Corp 0.0 $ 1000 CONN RING CIRC 18-22AWG M...
PMN1-3R-3K Panduit Corp 0.0 $ 1000 CONN RING CIRC 18-22AWG M...
PMN1-3F-3K Panduit Corp 0.0 $ 1000 CONN SPADE TERM 18-22AWG ...
PMN16XNEX Nexperia USA... 0.12 $ 3000 MOSFET N-CH 20V 6.9A 6TSO...
PMN1-5F-3K Panduit Corp 0.25 $ 1000 CONN SPADE TERM 18-22AWG ...
PMN1-5R-3K Panduit Corp 0.0 $ 1000 CONN RING CIRC 18-22AWG M...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics