
Allicdata Part #: | 1727-7657-2-ND |
Manufacturer Part#: |
PMN55ENEX |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 4.5A 6TSOP |
More Detail: | N-Channel 60V 4.5A (Ta) 560mW (Ta), 6.25W (Tc) Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.11230 |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 560mW (Ta), 6.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 646pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMN55ENEX is a single-die MOSFET device, commonly used in power electronics applications. The device includes a main channel that is electrically connected to the gate and a p-type substrate with a guardrail diode. The direct current (DC) drain and source terminals are connected to the main channel, allowing for the power switch in the power electronics applications.
The PMN55ENEX has a low on-resistance which is the major factor in current selection. The low gate charge is another major factor that makes this MOSFET attractive in power electronics applications. In addition, it has a low maximum gate charge and very low gate-source capacitance that help reduce switching losses. The PMN55ENEX is ideal for switching applications where high power density, low power consumption and low temperature performance are required.
The working principle of PMN55ENEX can be understood by considering the structure of the MOSFET. Each cell consists of a p-type substrate, a main channel and a guardrail diode. When the gate voltage is high, electrons from the p-type substrate enter the main channel, causing a decrease in the channel conductance. As the gate voltage is lowered, the channel conductance increases, and current can flow through the main channel. Simultaneously, the guardrail diode is connected to the negative gate voltage, allowing for the current flow through the guardrail diode. The main channel also acts as a diode, allowing for the current flow from drain-to-source and from source-to-drain.
The PMN55ENEX is designed for drain-source blocking operation at voltages up to -60V, and the blocking voltage is regulated by the gate voltage. The maximum gate voltage is -60V, and it is increased by the gate-source voltage. The maximum gate-source voltage is +1.5V. Moreover, the PMN55ENEX has an upper body diode, which is used to undervoltage lockout (UVLO) protection. The device also offers an over-temperature protection that is used to protect the MOSFET against excessive power dissipation.
The PMN55ENEX is used for high power applications such as power switching and motor speed control. It can be used in switched mode power supplies (SMPS), controlling the output voltage by pulsing the voltage supplied to the load. It is also suitable for use in motor speed control, where the PMN55ENEX can be used to regulate the speed of the motor by controlling the output voltage or current. In addition, the PMN55ENEX is also suitable for use in Class D amplifiers, where it is used to keep the output signal at a constant level.
The PMN55ENEX is an important part of the power conversion chain and has proven to be a reliable, reliable and cost-effective solution for power electronic applications. Its low on-resistance, low gate charge, low maximum gate charge and low gate-source capacitance make it an excellent choice for those looking to optimize power conversions while reducing switching losses.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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