PMN55LN,135

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	SC-74, SOT-457
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.75W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 20V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	13.1nC @ 10V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	65 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4.1A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to PMN55LN,135 Transistors - FETs, MOSFETs - SingleThe PMN55LN,135 transistor is a single FET (Field Effect Transistor) device, that is part of the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) family. It is a high voltage, surface mount transistor, which is designed for low on-resistance and low voltage drop. The PMN55LN,135 offers very low input/output capacitance and long channel lengths for high input/output resistance.Applications of PMN55LN,135 Transistors - FETs, MOSFETs - SingleThe PMN55LN,135 transistor is widely used in a range of electronic circuits. It is often found in computer power supplies and other power circuits, along with DC/DC converters and unregulated linear power supplies. It is also used in a wide array of audio amps, filter circuits, and differential amplifiers. Additionally, it can also be used in industrial process control systems.Working Principle of PMN55LN,135 Transistors - FETs, MOSFETs - SingleThe PMN55LN,135 transistor is a three-terminal device that operates using the principle of field-effect control. In basic terms, the transistor has an electrical field that controls the conductivity between two terminals called the source and drain when a voltage is applied between them. The third terminal, called the gate, is used to control the flow of current between the source and drain.Basically, the source-to-drain current (Isd) is proportional to the voltage applied to the gate. The gate voltage can be varied dynamically with a given control signal, allowing the FET to be used as an electronic switch. When the gate voltage is greater than the threshold voltage (Vth) of the device, the drain-source resistance (Rds) reduces and I_sd increases.ConclusionThe PMN55LN,135 transistor is a high voltage, surface mount MOSFET device, designed to offer low on-resistance, low voltage drop, low input/output capacitance, and long channel lengths. It is suitable for a range of applications, such as audio amplifiers, DC/DC converters, filter circuits and industrial process control systems. The transistor operates using the principle of field-effect control, wherein the I_sd is proportional to the voltage applied at the gate, which can be varied dynamically via a given control signal.

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