
Allicdata Part #: | 568-6869-2-ND |
Manufacturer Part#: |
PMR370XN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 0.84A SOT416 |
More Detail: | N-Channel 30V 840mA (Tc) 530mW (Tc) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 530mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 37pF @ 25V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 0.65nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 840mA (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMR370XN,115 is a single Junction Field Effect Transistor (JFET). It utilizes a junction between two n-type semiconductor layers to create a reverse biased p-n junction which is used to modulate current flow in the device. JFETs have very low input resistance, which makes them attractive to use in applications where large current demands are expected. As a result, they are widely utilized in the design of current sensing circuits, as well as in voltage-controlled power sources.
The PMR370XN,115 is built using a dual N-channel MOSFET configuration and operates using a minimum gate voltage of 1.2V. It provides a high input impedance (of typically greater than 1GOhm), and a very low output capacitance (of typically less than 0.1pF). The device has a 5A maximum drain-source current rating, and a -50V maximum voltage rating.
Regarding its applications, the PMR370XN,115 is mainly used to provide high-end current sensing circuits which are controlled by a low-level voltage input. This is particularly suitable for applications where large current demands are expected, such as LED lighting systems, HVAC system controls, and low-voltage power supplies. Furthermore, the low output capacitance of the device makes it well-suited for use in switching amplifiers, in order to filter out unwanted frequencies and reduce noise.
The PMR370XN,115 has a very simple working principle. When a gate voltage is applied to the device, a channel will be created between its drain and source, which allows current to flow through the device. The amount of current that flows through the device is regulated by the gate voltage, allowing the circuit which utilizes the device to be voltage-controlled. On the other hand, if the gate voltage is removed, then the channel between the drain and source of the device will close and no current will flow through the device.
In summary, the PMR370XN,115 is a single Junction Field Effect Transistor (JFET) which is used mainly in current sensing circuits, switching amplifiers, and voltage-controlled power sources. It provides a very low input resistance, high input impedance, and very low output capacitance, making it well-suited for use in applications where large current demands are expected. It operates using a minimum gate voltage of 1.2V, and has a 5A maximum drain-source current rating, as well as a -50V maximum voltage rating. The working principle is simple and allows the device to be voltage-controlled.
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Part Number | Manufacturer | Price | Quantity | Description |
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PMR370XN,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V 0.84A SOT... |
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