Allicdata Part #: | 568-2359-2-ND |
Manufacturer Part#: |
PMWD15UN,518 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 20V 11.6A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 11.6A 4.2W Sur... |
DataSheet: | PMWD15UN,518 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 11.6A |
Rds On (Max) @ Id, Vgs: | 18.5 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 22.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 16V |
Power - Max: | 4.2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The PMWD15UN,518 is a one of the leading transistors in the field of Field Effect Transistors, MOSFET’s and Arrays. This transistor type, most commonly referred to as "multi-gate MOSFET’s" are a crucial part of many electronic devices and circuits. Here is a basic explanation of the PMWD15UN,518’s application field and working principle.
The multi-gate MOSFET, commonly abbreviated as a MOSFET array, incorporates the design of an N-channel field effect transistor with multiple gates. This type of transistor permits the current to pass through it in only one specific direction for low power applications. The PMWD15UN,518 is a dual-gate MOSFET that consists of a source, a drain, one gate and two bulk regions. Each of these components has a specific function in order to control the amount of current that passes through the MOSFET.
The most important aspect of the PMWD15UN,518 is its application field. Multi gate MOSFETs have been used in a multitude of electronic devices. They are used to create digital logic circuits, analog amplifiers and switches, as well as power electronic applications in areas such as automotive, industrial, and consumer products. The PMWD15UN,518 offers an increased power efficiency compared to other types of transistors, making it ideal for these kinds of applications.
In terms of its working principle, the PMWD15UN,518 works the same way as a conventional field-effect transistor. The most basic operation of a multi-gate MOSFET involves the application of a voltage to its gate. By controlling the amount of voltage applied, the current passing through the transistor can be regulated. When no voltage is applied to the gate, the transistor is said to be in the “off” state. When a voltage is applied to the gate, the transistor is said to be in the “on” state and the current begins to flow.
The PMWD15UN,518 is also capable of operating in three other states, depending on the amount of voltage applied to the gate. This makes it suitable for many applications that require switching among states in order to achieve the desired result. For example, this type of transistor can be used to control the speed of a motor or to regulate the power supplied to a light bulb.
In terms of its size, the PMWD15UN,518 is relatively small in comparison to other transistors. This makes it a great choice for applications where space is limited. It can also be used in low voltage applications due to its ability to operate with minimal gate voltage.
The PMWD15UN,518 is one of the most commonly used field effect transistors and is widely used in a variety of applications. Its application field and working principle make it ideal for low power and low voltage applications and allows it to operate efficiently in all different applications.
The specific data is subject to PDF, and the above content is for reference
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