Allicdata Part #: | 568-2363-2-ND |
Manufacturer Part#: |
PMWD26UN,518 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 20V 7.8A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 7.8A 3.1W Surf... |
DataSheet: | PMWD26UN,518 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 23.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1366pF @ 16V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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PMWD26UN,518 is a field-effect transistor (FET), more commonly known as a MOSFET. It is a type of transistor that is made up of a semiconducting material, typically silicon, which is sandwiched between two other materials, usually an insulator like glass or plastic, and a semiconductor, either metallic (usually aluminum or gold) or polymeric. The transistor\'s array encompasses the channel area, making possible the transfer of electrical signals.
Applications
The PMWD26UN,518 is primarily used in automotive, medical, and communications applications because of its low power consumption and high speed of operation. In automotive applications, the PMWD26UN,518 is used in anti-lock braking systems and cruise control systems. In medical applications, due its low power consumption, the transistor is used in pacemakers and other medical devices. Additionally, it is used in communication devices, such as digital cameras, cell phones, and wireless sensors.
Working Principle
FETs are transistors that use an electric field along a channel to control current that flows through the transistor. The voltage applied to the gate terminal (also known as the control gate) affects the current that passes through the source terminal, called the drain. The source, gate, and drain are the three terminals of the FET transistor. The operation of the PMWD26UN,518 is based on the principle of electrostatic force, which involves the use of an electric charge to increase the strength of attraction between two charged objects. This is known as the “gate effect”.
When a voltage is applied to the gate terminal, it causes an electrostatic field, which pushes electrons in the channel toward the drain terminal. This causes current to flow from the drain terminal to the source terminal and is called the “channel effect”. The greater the applied voltage, the higher the current that is able to pass through the transistor.
Conclusion
The PMWD26UN,518 is a field-effect transistor array that is used in a variety of applications, including automotive, medical, digital cameras, and communication devices. Its working principle is based on the principle of electrostatic force, wherein a voltage signal is applied to the gate terminal and an electrostatic field is generated, which pushes electrons in the channel toward the drain terminal.
The specific data is subject to PDF, and the above content is for reference
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