PMWD19UN,518

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PMWD19UN, 518 is a part of an array of low voltage enhancement mode MOSFETs that can be used in high speed applications. It is distributed by NXP Semiconductors, a leading semiconductor manufacturer. The part is designed to provide excellent performance, while providing a wide range of power levels.

The PMWD19UN, 518 array operates from a single supply range of 1.8V to 5.5V and is capable of delivering up to 30mA at 1.8V for peak output currents. It also offers low input capacitance of around 18pF, making it suitable for high speed applications.

The device is manufactured using advanced process technology and is available in a variety of packages. It has a wide operating temperature range from -40oC to +85oC, to make it suitable for use in extreme temperature conditions.

PMWD19UN, 518 is suitable for use in various applications, including low power switching, logic level shifting, RF circuit building, and motor control. The device provides excellent power efficiency, reduced system cost, and improved performance.

The main working principle of this device is based on the MOSFET technology. It is basically a field-effect transistor (FET) that uses the voltage of the gate to regulate the flow of electrons in the body of the transistor. The gate is basically a capacitor that takes in some of the energy and transmits it, based on the input voltage, to modify the existing charge on the body of the transistor.

The power of the PMWD19ON, 518 is determined by its operating voltage and the current flowing through it. It is ideal for use in low voltage applications, as it can take up to 1.8V, and can switch from off to on within a few nano seconds.

The PMWD19UN, 518 is a versatile, low power MOSFET array, and can be used in a variety of applications. It is available in different packages, so that it can be integrated into existing systems with minimal modifications. It is a cost effective solution that provides excellent power efficiency and improved performance.

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