Allicdata Part #: | 568-2360-2-ND |
Manufacturer Part#: |
PMWD16UN,518 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 20V 9.9A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 9.9A 3.1W Surf... |
DataSheet: | PMWD16UN,518 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 9.9A |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 23.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1366pF @ 16V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The PMWD16UN,518 is an array of transistor field effect transistors (FETs). It has 16 FETs in the one array, and operates from a supply voltage of 18V. It features high-speed switching and low on resistance. The PMWD16UN,518 has been designed for use in a variety of applications, and has a variety of different working principles.
The first working principle of the PMWD16UN,518 is its inherent polarity protection. This means that it will not pass an undesired voltage through its gate. This is important to prevent accidental and incorrect operation of the device in the event of an incorrect polarity connection. The PMWD16UN,518 also protects against overvoltage, making it suitable for harsh environments.
The second working principle of the PMWD16UN,518 is its dual gate. This feature allows the PMWD16UN,518 to control the on/off state and speed of the transistor. This is because the gate receives two different voltages; one to enable the transistor to turn on, and one to turn off the transistor. This helps to ensure that the transistor will not be unintentionally switched into an undesired state. This also allows for more precise control over the performance of the PMWD16UN,518.
The third working principle of the PMWD16UN,518 is its low on-resistance. This allows for lower power consumption than a standard MOSFET array. This is important in applications where power efficiency is a priority. The PMWD16UN,518 also features integrated protection features to prevent circuit damage due to excessive power dissipation. This allows for reliable operation even in extreme conditions.
The PMWD16UN,518 provides a wide range of application fields. It can be used in high-speed sensing and switching applications. It is also used in power control circuits, where high performance and power savings are required. The PMWD16UN,518 is also used in medical devices, automotive systems, communication systems, and home automation applications.
The PMWD16UN,518 has been designed to provide reliable and high performance in a wide range of application fields. It features multiple working principles which allow it to be used in a variety of applications. The PMWD16UN,518 is a great choice for high-speed, low power, and reliable switching applications.
The specific data is subject to PDF, and the above content is for reference
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