Allicdata Part #: | PN4355-ND |
Manufacturer Part#: |
PN4355 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 0.8A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 800mA 625mW Thro... |
DataSheet: | PN4355 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 1A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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PN4355 is a single bipolar transistor, belonging to the large family of semiconductor transistors. Generally, one characterizes transistors as either PN junction or metal-oxide-semiconductor (MOS) transistors. Bipolar transistors are composed of two PN junctions, while MOS transistors are composed of three N type regions and a single P type region. PN4355 is a NPN junction transistor. It has three terminals, namely an emitter, a base and a collector, which are typical of transistors.
The PN4355 is a very flexible semiconductor device utilized in many electronic circuits. It is usually used for its low power dissipation, low current gains, low saturation voltages and high input impedances. Its applications include switch mode power supplies, voltage-controlled oscillators, tuned amplifiers, analog and digital circuits, amplifiers, and a range of consumer electronics applications as well. It is also employed in many industrial, automotive and aerospace applications.
PN4355’s working principle is very simple. It is based on the process of electron flow. The transistor operates as a switch or amplifier when a small current at the base is used to control a larger current at the collector, or emitter. This is the very basics of bipolar junction transistor operation.
When the base-emitter junction of the PN4355 is forward biased, electrons from the emitter flow to the base. When a certain level of current is reached, the transistor turns on. This is, in effect, a "switch" action - the current flow between the collector and emitter is predetermined by the current supplied to the base. By varying the amount of base current, the collector current can be regulated.
One of the key advantages of the PN4355 is its ability to amplify signals, allowing it to be used in a number of applications such as audio amplifiers and radio frequency amplifiers. In this configuration, the small potential difference in the base is amplified by the transistor, resulting in a much larger output at the collector. This allows the PN4355 to be used to amplify oscillations, allowing for smaller and more powerful systems.
PN4355 also exhibits a number of other beneficial characteristics, such as low noise making it an ideal choice for signal processing applications, excellent temperature stability and fast switching time. Furthermore, its ability to operate with a wide range of voltages, currents and impedances makes it very suitable for a wide range of applications.
As a result, the PN4355 is a versatile semiconductor device, being applicable in many different fields of electronics. Due to its low power dissipation, small size and uncomplicated working principle, it is an ideal choice for countless applications in consumer, automotive and aerospace markets.
The specific data is subject to PDF, and the above content is for reference
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