PN4393 TRA Discrete Semiconductor Products |
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Allicdata Part #: | PN4393TRATR-ND |
Manufacturer Part#: |
PN4393 TRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | JFET N-CH 40V 0.625W TO92 |
More Detail: | JFET N-Channel 40V 625mW Through Hole TO-92 |
DataSheet: | PN4393 TRA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 20V |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 14pF @ 20V |
Resistance - RDS(On): | 100 Ohms |
Power - Max: | 625mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92 |
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The PN4393 TRA is a high voltage (HV) surface mount trench power MOSFET that is specifically designed for increased protection against surge currents, making it well-suited for off-line power applications in server power supplies and other industrial power electronics. The PN4393 TRA features excellent ESD protection, improved immunity against secondary breakdown due to its more robust structure, and fast switching performance. In this article, we will discuss the applications and working principle of the PN4393 TRA.
The PN4393 TRA is an insulated gate type of JFET transistor. It is a high-performance semiconductor device that is well-suited for use in a variety of offline power applications. It is ideal for server power supplies, industrial power electronics, solar inverters, and other applications that require circuit protection against surge currents.
The PN4393 TRA is designed with a drain-source breakdown voltage of 500V, making it suitable for use in high-voltage applications. It also features a high dV/dt and dI/dt immune rate, ensuring protection against circuit noise and preventing false triggers during switching. Additionally, the PN4393 TRA features a low on-resistance of 0.2 ohm, enabling a fast switching speed with less heat, as well as a low static drain-source on-resistance (RDSon). This helps to conserve power and reduce power consumption in applications where power loss is a concern.
The working principle of the PN4393 TRA is based on the principle of insulated-gate field-effect transistors (IGFETs). It is a four-terminal device that utilizes a fabricated semiconductor between two electrodes to create an instant electric field. When voltage is applied to the gate terminal, the electric field created between the source and drain terminals forces electrons to move from source to drain. This allows electricity to move from source to drain and vice versa, enabling the transistor to work as an on/off switch.
The PN4393 TRA can be used in a variety of applications, including switch-mode power supplies (SMPS), LCD displays, power management systems, motor control systems, LED lighting, and other high-voltage applications. It is a robust and reliable device that offers superior protection against surge currents, making it well-suited for industrial power electronics. Additionally, it features low on-resistance and excellent ESD protection, allowing it to handle rigorous system demands.
In summary, the PN4393 TRA is a high voltage surface mount trench power MOSFET designed for increased protection against surge currents. It is suitable for offline power applications, such as server power supplies and other industrial power electronics. It is a four-terminal device that utilizes a fabricated semiconductor between two electrodes to create an instant electric field, enabling it to convert electric energy from source to drain. Additionally, it features excellent ESD protection and a low on-resistance of 0.2 ohm, providing improved immunity against secondary breakdown and fast switching performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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PN4391 TRE | Central Semi... | 0.26 $ | 4000 | JFET N-CH 40V 0.625W TO92... |
PN4393 | ON Semicondu... | 0.0 $ | 1000 | TRANSISTOR SWITCH N-CH SS... |
PN4392 | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4391 | ON Semicondu... | -- | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4303 | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4302 | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4393 TRA | Central Semi... | 0.0 $ | 1000 | JFET N-CH 40V 0.625W TO92... |
PN4303_D26Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4391_D26Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4391_D27Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4391_D75Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4392_D26Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4392_D27Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4392_D75Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4393_D26Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4393_D27Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4393_D74Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4393_D75Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 625MW TO92J... |
PN4355 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 60V 0.8A TO-92B... |
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CFR-25JR-PN430K | Yageo | 0.01 $ | 1000 | RES 5% 1/4W AXIAL430 kOhm... |
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CFR-25JR-PN43K | Yageo | 0.01 $ | 1000 | RES 5% 1/4W AXIAL43 kOhms... |
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RSF50SJT-PN430K | Yageo | 0.01 $ | 1000 | RES METAL OXIDE 1/2W 5% A... |
RSF50SJT-PN430R | Yageo | 0.01 $ | 1000 | RES METAL OXIDE 1/2W 5% A... |
RSF50SJT-PN43K | Yageo | 0.01 $ | 1000 | RES METAL OXIDE 1/2W 5% A... |
RSF50SJT-PN43R | Yageo | 0.01 $ | 1000 | RES METAL OXIDE 1/2W 5% A... |
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