Allicdata Part #: | PN4393_D75Z-ND |
Manufacturer Part#: |
PN4393_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 625MW TO92 |
More Detail: | JFET N-Channel 30V 625mW Through Hole TO-92-3 |
DataSheet: | PN4393_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 20V |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 14pF @ 20V |
Resistance - RDS(On): | 100 Ohms |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4393 |
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PN4393_D75Z application field and working principle
The PN4393_D75Z is a type of JFET (Junction Field Effect Transistor) which is a semiconductor device that consists of three terminals, the gate, the drain, and the source. It is often used as a voltage-controlled resistor, either as a amplifier, voltage regulator or switch.
JFETs are unipolar transistors, meaning that current flows between two regions of the device and can be predominantly controlled by a single control electrode. This is in contrast to a bipolar transistor, where current is amplified by two different currents. Compared to a bipolar transistor, JFETs are low-noise, high-frequency, and possess higher electron mobility, making them critical components in many electronic circuits.
The PN4393_D75Z is a single-gate, lateral N-channel FET, with high power and high current. It is designed to operate in DC and low-frequency AC applications, such as amplifiers and RF switches. Its main feature is its high breakdown voltage and low gate leakage current. It also has low gate capacitance and high dielectric strength for excellent thermal management, making it ideal for use in high-temperature applications.
In operation, the source and drain terminals of a PN4393_D75Z are connected to a voltage source so that a voltage is applied across the source and drain. When a voltage is applied to the gate, a depletion region forms along one side of the semiconductor junction, inhibiting current flow from the source to the drain. The amount of current flowing through the FET could be adjusted by altering the size of the depletion region.
This makes the PN4393_D75Z well-suited to demanding applications such as switching and amplifying signals at high frequency, such as in radio communications systems, radar systems, and high-speed industrial communications systems. It is also suitable for automotive applications, where it could be used as a voltage regulator, as well as in power amplifiers and power supplies.
The PN4393_D75Z is also a good choice for applications where efficient thermal management is crucial, such as in data processing systems, or for applications where low noise and low distortion are required, such as in hearing aids, medical and industrial equipment, and precision data acquisition systems.
In general, the PN4393_D75Z is a reliable device which can provide an efficient and low-cost solution, particularly for high-speed applications. Its high breakdown voltage, low gate leakage current and low gate capacitance also make it ideal for applications where thermal management is an essential requirement.
The specific data is subject to PDF, and the above content is for reference
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