PN4391_D27Z Allicdata Electronics
Allicdata Part #:

PN4391_D27Z-ND

Manufacturer Part#:

PN4391_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 625MW TO92
More Detail: JFET N-Channel 30V 625mW Through Hole TO-92-3
DataSheet: PN4391_D27Z datasheetPN4391_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N4391
Description

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The PN4391_D27Z transistor is a JFET - Junction Field Effect Transistor. This type of transistor is an active semiconductor device made up of two gates, each connected to N-type and P-type regions of the semiconductor. This type of transistor is known for its incomparable stability and reliability. JFETs have a very good record for providing reliable performance over a long period of time.

The PN4391_D27Z JFET is usually used in radio frequency applications. It is most commonly used in wireless communication and is specially tailored for use in such applications. It is a type of high gain DC voltage and current amplifier and is used in many smaller systems and designs. This transistor is easily available in various mechanical and electrical configurations, making it a popular choice for many applications. It is also very efficient in terms of power consumption.

The working principle of the PN4391_D27Z JFET is relatively simple. When a voltage is applied to the gate of the JFET, it causes a depletion zone to form around the gate. This depletion zone is formed because electrons are repelled from the P-type and attracted to the N-type regions of the semiconductor, which causes the current flow between the two regions to decrease. This decrease in current flow is referred to as the depletion region. The decrease in current flow then affects the voltage at the drain, which in turn affects the current flow.

The PN4391_D27Z JFET can be used in various applications such as analogue switches, RF amplifiers, precision audio preamplifiers as well as buffers. It can also be used in various low noise applications because of its extremely low noise characteristics. This particular JFET is known for its fast switching times and low gate leakage which makes it suitable for a variety of radio frequency applications.

In conclusion, the PN4391_D27Z transistor is an ideal choice for use in radio frequency applications. With its fast switching times and low gate leakage, it is perfect for a wide range of applications. Its excellent performance makes it one of the most reliable transistors available and its wide range of configurations make it easily recognizable and helpful in most situations. While the working principle of the PN4391_D27Z JFET is relatively simple, it is a necessary requirement for any successful application.

The specific data is subject to PDF, and the above content is for reference

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