PN4391_D26Z Allicdata Electronics
Allicdata Part #:

PN4391_D26Z-ND

Manufacturer Part#:

PN4391_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 625MW TO92
More Detail: JFET N-Channel 30V 625mW Through Hole TO-92-3
DataSheet: PN4391_D26Z datasheetPN4391_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N4391
Description

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PN4391_D26Z is a junction field-effect transistor (JFET) used in many electronic circuits. It is a low-power and high-performance N-channel JFET with an integrated gate protection diode. This JFET offers excellent performance as a voltage amplifier and signal switch in a wide variety of applications.

As one of the most commonly used components in both analog and digital electronics, JFET transistors provide various advantages. Many circuits require JFETs to perform signal control and voltage-controlled sensitivity, because their gate-source impedance is very high and their distortion is low. Additionally, many JFETs are able to safely handle high voltages, making them very useful in linear power circuits, such as those used to regulate and control the output of a power supply in an audio amplifier, for example.

When a voltage is applied to the gate of a JFET, a small current can flow between the source and the drain. This occurs because the gate forms a barrier that prevents electrons from crossing from the source to the drain. As the voltage increases, the barrier becomes more robust and less current may pass through. Inversely, when the voltage decreases, the barrier becomes weaker, and more current can pass through the JFET.

PN4391_D26Z is an N-type JFET with superior performance compared to other N-type devices and allows operating voltages up to 40V. The combination of extreme source-drain impedance and low leakage makes PN4391_D26Z an ideal choice for many applications that require high impedance or low voltage control. It also provides superior noise and distortion performance as an amplifier.

It is commonly used as a switch in touchscreens, which require a low voltage control and high input impedance. Additionally, PN4391_D26Z is also used in low-noise analog design circuits, audio circuits, and for high-impedance applications. This JFET also has the added protection of a diode which helps protect the gate from accidental contact with a dc voltage greater than 40V.

In summary, PN4391_D26Z is a very useful N-channel junction field-effect transistor and offers superior performance in many different applications. Its integrated gate protection diode makes it very reliable and allows it to safely handle high voltages. It is an ideal choice for many low-voltage control and high-impedance applications, such as touchscreens and low-noise analog circuit designs.

The specific data is subject to PDF, and the above content is for reference

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