PTZTE2516B

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Diodes - Zener - Single: PTZTE2516B application field and working principle

PTZTE2516B, a 16V NPN epitaxial planar bipolar transistor manufactured by Diodes Incorporated is one of the most useful and widely used zener diodes, popularly known as the PT2516B or FT2516B. It is used in the protection of circuit components and the protection of the power of the devices. In this article, we will be discussing the application field and the working principle of the PTZTE2516B.

The PTZTE2516B is an NPN transistor, which is composed of three main components: base, emitter, and collector. It has a maximum voltage rating of 16V, with a breakdown voltage range of 10V to 15V and a maximum power dissipation of 500 mW. Its maximum forward current rating is 200 mA and its collector-to-emitter voltage rating is 30V.

The PTZTE2516B is most often used in the protection of the power of both digital and analog components. This is because the PTZTE2516B offers a wide range of protection options, ranging from low to high voltages, and from low to high power levels. Furthermore, the transistor is extremely reliable and can withstand temperatures up to 150 degrees Celsius.

In addition to its power protection role, the PTZTE2516B can also be used in the control of noise and signal distortion. This is because the device is capable of providing low voltage zener functions, which are useful in preventing noise and signal distortion. Furthermore, the device is also capable of providing high power zener functions in order to protect important circuit components.

The working principle of the PTZTE2516B is simple and straightforward. The device is a voltage dependant device, meaning that its performance is directly related to the applied voltage. When a decreased voltage is applied at the collector side, the device will turn off and when an increased voltage is applied at the collector side, the device will turn on again. In this way, the device can limit the current that can pass through the device.

In summary, the PTZTE2516B is an NPN transistor manufactured by Diodes Incorporated with a voltage rating of 16V and a breakdown voltage range of 10V to 15V. It is mostly used for power protection applications, in both digital and analog components, as well as for noise and signal distortion control. Its working principle is based on voltage-dependant behavior, which allows it to turn off when a decreased voltage is applied at the collector side and turn on again when an increased voltage is applied at the collector side.

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