PTZTE259.1A

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Voltage - Zener (Nom) (Vz):	9.1V
Tolerance:	±6%
Power - Max:	1W
Impedance (Max) (Zzt):	6 Ohms
Current - Reverse Leakage @ Vr:	20µA @ 6V
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	PMDS
Base Part Number:	PTZ9V1

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Diodes - Zener - Single PTZTE259.1A Application Field and Working PrincipleA Zener diode is an electronic device consisting of a p-n junction, which is set up in reverse-biased configuration to bring about the zener or avalanche breakdown. The diode is known as a zener diode because it was first named after Clarence Zener, the scientist who first discovered the phenomenon of breakdown. The PTZTE259.1A is a single Zener diode made by Seoul Semiconductors (SSC). It is one of their more popular diodes due to its variety of features and benefits. The PTZTE259.1A has a wide range of applications, from signal clamping to voltage regulation. In signal clamping applications, the PTZTE259.1A acts as a voltage limiter, preventing signal distortions caused by voltages beyond the acceptable limit. In voltage regulation applications, the diode is used to maintain a constant voltage even in the presence of varying current or load conditions. The PTZTE259.1A can also be used as a protection device in high voltage switching systems and power supplies. The PTZTE259.1A is designed for use in low power consumer electronics, such as portable communication devices and consumer electronics, as well as in industrial applications, such as automotive, wireless, and other high power systems. The PTZTE259.1A is low leakage, high reliability, and has a low temperature coefficient. It is available in a surface mounted plastic R-6 package, and has low thermal resistance. To understand the working of the PTZTE259.1A, we need to first understand the phenomenon of Zener breakdown. When a diode is connected in reverse bias, an electric field is created. As the applied voltage is increased, the electric field becomes stronger and eventually exceeds a certain limit. This limit is known as the zener voltage Vz or the breakdown voltage Vbr. When the breakdown voltage is attained, current from the external source flows through the diode. This current is known as the zener current Iz. The PTZTE259.1A is a voltage-controlled device, and the breakdown voltage of the diode is determined by its manufacturing process. The breakdown voltage of the PTZTE259.1A is 5.1V, and the zener current is between 10mA and 80mA. Above this current, the diode is destroyed, and must be replace. The diode also has a maximum power dissipation of 500mW. The PTZTE259.1A is a versatile diode with a wide range of application fields and operating conditions. Its wide operating temperature range, low temperature coefficient, and low leakage current make it an ideal choice for many low power consumer electronic and industrial applications.

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