PTZTE258.2B Allicdata Electronics

PTZTE258.2B Discrete Semiconductor Products

Allicdata Part #:

PTZTE258.2BTR-ND

Manufacturer Part#:

PTZTE258.2B

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 8.7V 1W PMDS
More Detail: Zener Diode 8.7V 1W ±6% Surface Mount PMDS
DataSheet: PTZTE258.2B datasheetPTZTE258.2B Datasheet/PDF
Quantity: 1000
1 +: $ 0.14000
10 +: $ 0.13580
100 +: $ 0.13300
1000 +: $ 0.13020
10000 +: $ 0.12600
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Voltage - Zener (Nom) (Vz): 8.7V
Tolerance: ±6%
Power - Max: 1W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 20µA @ 5V
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Base Part Number: PTZ8V2
Description

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The PTZTE258.2B is a single zener diode that is often used in various electrical circuits that require protection from overvoltages. It works by allowing a current to flow through it when a certain voltage threshold is exceeded. It has a wide range of applications in automotive, telecommunications, medical and industrial applications.

The main purpose of the PTZTE258.2B is to protect sensitive electronic components from damage due to excessive voltage. It also helps reduce power consumption by providing a regulated voltage supply and limiting the amount of current that can be drawn from it. The PTZTE258.2B can also be used for switching applications such as motor control and solenoid control.

The working principle of the PTZTE258.2B is based on the zener effect. When the zener voltage of the diode is exceeded, the zener depletion layer width increases. This increase in the depletion layer width creates an opposing voltage that increases oppositely to the applied voltage and thus limits the voltage across the load. This ensures that the load will not be damaged by excess voltage.

The PTZTE258.2B is made of a metal-oxide semiconductor and has a variety of features that make it suitable for a range of applications. It has a low forward voltage drop of 0.3V and a high reverse current of 1mA. It also has a high power capability of up to 500mW and can withstand temperatures up to 150°C. Moreover, it has a excellent thermal stability and low leakage current over a wide range of current. Finally, it has an improved high-frequency noise performance for stable operation at high frequencies.

The PTZTE258.2B can be used in a variety of applications including protection for television receivers, automotive systems, photovoltaic cells and switching power supply. It is also used in RF switching applications, scan converters and other high-frequency technologies. Furthermore, this diode is used to protect equipment from electrical surges and spikes which can occur in industrial, domestic and commercial environments.

In conclusion, the PTZTE258.2B is a single zener diode that is suitable for a wide range of applications. It provides protection from overvoltages, helps reduce power consumption and has a variety of features that make it suitable for a range of applications. This makes it highly versatile and a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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