PTZTE253.6A

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The PTZTE253.6A Zener diode belongs to the single diode family, specifically designed to provide over-voltage protection for electronic circuits. This device is designed for industrial, automotive, medical and military applications such as circuit protection in smart phones, power supplies, interface circuits, embedded processors, and analog-digital converters. It has a standoff voltage of 253 volts and an operating temperature range from -55 to 150 degrees Celsius.

A Zener diode is semiconductor device with a voltage breakdown, characterised by a greatly enhanced reversed resistance at a pre-specified reverse-bias voltage. When the reverse-bias voltage reaches the Zener voltage, the Zener diode is operative and the reverse current increases exponentially with a small cumulative increase in reverse-bias voltage. This property makes it useful in the design of voltage references and shunt regulators.

The operating principle of the PTZTE253.6A is based on the Zener diode\'s electrical behaviour. It is constructed with two closely spaced metal contacts, an anode and a cathode, between which is a junction. When the diode is reversed biased, the reverse-bias voltage decreases as electrons from the anode move to the cathode, thus creating a depletion layer between them. When the reverse-bias voltage reaches the Zener voltage, the Zener diode enters a breakdown state and the reverse current increases exponentially.

In the PTZTE253.6A Zener diode, this avalanche voltage breakdown mechanism provides over-voltage protection of electronic circuits. The device is designed to sustain a continuous reverse operating current up to 1A, with a power dissipation of 8W. Its Zero-Voltage and Zero-Current junction characteristics make it ideal for reduction of electrical noise and other transient fluctuations.

The PTZTE253.6A is a high voltage, low power-dissipation Zener diode, which can be used in various applications. Its high peak power provides the required over-voltage protection in many circuit designs. Its highly reliable performance makes it suitable for use in a variety of industrial, automotive, medical and military applications, such as circuit protection in power supplies, interface circuits and embedded processors.

The PTZTE253.6A is a high reliability device with a long lifetime. It also features a low reverse-bias leakage current and a very low forward-bias capacitance, which reduces the risk of electrical interference. Its wide operating temperatures, from -55 to 150 degrees Celsius, make it suitable for different environmental conditions.

In summary, the PTZTE253.6A Zener diode is an ideal choice for designing over-voltage protection circuits and for reducing electrical noise and transient fluctuations. It provides reliable operation and long lifetime, with a wide operating temperature range and low forward/reverse leakage currents. Its high peak power makes it suitable for use in a variety of applications, such as industrial, automotive, medical and military applications.

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