PTZTE254.7A

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Diodes, Zener, Single PTZTE254.7A is a type of single Zener diode, which is a semiconductor device that features an avalanche breakdown. The device is characterized by a very low knee voltage and wide breakdown voltage variation with temperature.

The application field of PTZTE254.7A mainly include voltage regulation, voltage clamping, DC/DC converters, over voltage protection and especially combined with a Schottky diode to enable synchronous rectification.

The normal operating range for PTZTE254.7A is -5 to 105 °C; it has a maximum power dissipation of 500mW and a maximum steady-state current of 22mA. Additionally, this device features low leakage current and low forward voltage drop. It is packaged in a hermetically sealed SOT-25 plastic package.

The working principle of PTZTE254.7A is based on the effects of reverse-biased p-n junctions. As the bias voltage increases, the electrons in the n-type material emit energy towards the p-region causing high concentrations of positive and negative charge carriers, which create an electric field. When the electric field reaches a critical value, the electrons are suddenly accelerated across the junction, becoming minority carriers in the p-region.

When the electric field exceeds the breakdown voltage, the rate at which electrons cross the junction increases exponentially. This process is known as avalanche breakdown, and as it continues, the junction current increases very rapidly. The avalanche breakdown occurs when the electric field is strong enough to cause ionization of the lattice structure of the material, creating an electron-hole pair.

In conclusion, single Zener diodes, such as PTZTE254.7A, are suitable for applications involving voltage regulation, voltage clamping and over voltage protection. Its hermetically sealed package allows for maximum stability and reliability.

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