PUMD48,165 Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 5V / 100 @ 10mA, 5V
Base Part Number:	P*MD48
Supplier Device Package:	6-TSSOP
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	300mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	1µA
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	47 kOhms, 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The PUMD48 166 Application Field and Working Principle

Bipolar Junction Transistor (BJT) arrays are used to create current gain and power gain in circuits. The PUMD48 166 is a type of BJT array designed specifically for pre-biased applications in industrial and automotive circuits. The PUMD48 166 is designed to operate over a wide range of temperatures and voltages, and it is also compliant with RoHS standards. The device is ideal for applications such as motor control, lighting, sensors, and many other industrial digital logic systems.

Features of the PUMD48 166

The PUMD48 166 features a compact package design, which makes it ideal for space-constrained design requirements. It also has a low on-state current, making it very suitable for power reduction applications. The PUMD48 166 provides excellent off-state power dissipation, which helps reduce power consumption. Additionally, it has a fast switching speed, allowing the device to respond quickly to circuit input.

Internal Structure of the PUMD48 166

The PUMD48 166 consists of a series of transistors, resistors, and a diode collectively known as an array. The array is arranged in a Base-Emitter-Collector configuration. Each transistor in the array is connected to the next transistor in the sequence, forming an interlocking structure. The PUMD48 166 is constructed so that the base of each transistor is pre-biased with a low voltage. This pre-biasing is used to reduce the power used by the device and maintain a steady operating voltage even when the input voltage fluctuates.

The Working Principle of the PUMD48 166

The working principle of the PUMD48 166 is based on the same principles as other bipolar junction transistors. The PUMD48 166 consists of two p-type diodes connected in series between the Base and Emitter of each transistor. This forms a potential barrier which allows the current to flow through one diode at a time. Since the Emitter and Base are pre-biased, when a signal is applied to the input, the bias voltage will be shifted and current will flow from the Base to the Emitter. The current will then flow from the Emitter to the Collector, which will create a voltage across the Collector. The voltage across the Collector is amplified and can be used to control a device or system. This is why the PUMD48 166 is often used for motor control and other industrial digital logic systems.

Advantages of the PUMD48 166

There are several advantages to using the PUMD48 166. The low on-state current helps reduce power consumption, while the fast switching speed allows the device to respond quickly to inputs. The device is also designed to operate over a wider range of temperatures and voltages, making it ideal for use in automotive circuits. Additionally, the PUMD48 166 is compliant with RoHS standards and offers a compact package design, making it ideal for space-constrained circuit designs.

Conclusion

The PUMD48 166 is a pre-biased bipolar junction transistor array designed specifically for industrial and automotive applications. The device is designed to operate over a wide range of temperatures and voltages and is compliant with RoHS standards. It offers a low on-state current, making it suitable for power reduction applications, as well as a fast switching speed for quick responses to circuit inputs. Additionally, its compact design makes it ideal for space-constrained circuits.

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