PUMD18,115 Allicdata Electronics

PUMD18,115 Discrete Semiconductor Products

Allicdata Part #:

1727-7530-2-ND

Manufacturer Part#:

PUMD18,115

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP 6TSSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PUMD18,115 datasheetPUMD18,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03788
6000 +: $ 0.03294
15000 +: $ 0.02800
30000 +: $ 0.02635
75000 +: $ 0.02471
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Base Part Number: MD18
Supplier Device Package: 6-TSSOP
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The PUMD18/115 is a low-voltage, low-power, bipolar-junction transistor (BJT) array, pre-biased to 18V – 115V. This is a unique type of BJT array, in that it is independent of the bias voltage, making it well-suited for a wide variety of applications. The PUMD18/115 also has a maximum current rating of 500mA, making it suitable for direct drive applications, as well as lower-power BJT circuits.

Application fields

The PUMD18/115 can be used in a variety of industrial and power applications, such as:

  • Robotics
  • Industrial Automation
  • Power Conversion
  • Power Electronic Components
  • Motor Drive Applications
  • Medical Equipment

This device can also be used for audio amplification, portable instrumentation, and for general-purpose applications.

Working Principle

The PUMD18/115 utilizes a pre-biased array of transistors, meaning the BJTs used in this array have already had the appropriate bias voltage applied to them. This makes it suitable for use in applications where the circuit is exposed to extreme environments, such as high-temperature, high-voltage, or high-current conditions. The output of the array is then varied by adjusting the amount of current fed through the BJT, which can be done with an external control circuit.

In addition to its pre-biased nature, the PUMD18/115 also offers superior current handling capabilities, with a maximum current rating of 500mA. This makes it suitable for both direct-drive applications, as well as for lower-power BJT circuits. The PUMD18/115 is also highly efficient, with a typical peak-to-valley efficiency of 97%.

Conclusion

The PUMD18/115 is a pre-biased, low-voltage, low-power, bipolar-junction transistor array with excellent current handling capabilities, making it suitable for a wide variety of industrial, power, and general-purpose applications. Its pre-biased nature makes it perfect for use in extreme environments, and its superior peak-to-valley efficiency makes it a very efficient device.

The specific data is subject to PDF, and the above content is for reference

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