PUMD12,115 Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 5V
Base Part Number:	MD12
Supplier Device Package:	6-TSSOP
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	300mW
Frequency - Transition:	230MHz, 180MHz
Current - Collector Cutoff (Max):	1µA
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to PUMD12,115 Application Field and Working PrincipleThe PUMD12,115 Application Field and Working Principle are gaining attention, as it is an array pre-biased transistor manufactured by NXP Semiconductor, which integrates 12 independent n-type Polarity-up Multiple Drop (PUMD) transistors. This device is specifically designed to provide a high quality, fast switching capability and high current transport. This device is well suited for linear and digital logic applications, particularly in switching applications, as it can be pre-biased and operate with a switching time of only 250 microseconds.The PUMD12,115 Features and SpecificationsThe PUMD12,115 features a dynamic biasing technology which provides efficient operation and high current capability. The dynamic biasing technology helps improve switching performance and reduces switching power losses. The device has maximum output current of 800 mA (typical) and an on-state resistance of 2.8 Ω (typical). The breakdown voltage is also rated at 50 V (typical).The device also features a shielded photo sensitive element that helps increase the immunity to light induced errors. This is useful for applications such as optical switching and optical powers.PUMD12,115 Working PrincipleThe working principle of PUMD12,115 is based on the “MOSFET” concept. This involves the presence of a gate electrode which acts as a switch between the drain and source. In the PUMD12,115 the gate is replaced with two MOSFETs working in parallel.When the two MOSFETs are in the same stage (ON or OFF), the switching performance is optimized. When one MOSFET is in the ON state and the other is in the OFF state, then the device is set in pre-biased mode, and the performance will decline.When the PUMD12,115 is OFF, the drain and source are normally biased at the same voltage. In order to switch on, the gate must be driven in the forward bias mode. The drain and source voltages will therefore be different and the current will start flowing.As the current increases, the switching speed becomes faster. When the voltage at the gate remains constant, the source voltage starts to decline and the MOSFETs will continue to act as switches.In PUMD12,115, the on-state resistance can be adjusted by controlling the applied gate voltage. This helps to combine the benefits of low on-state resistance with high current capability.ConclusionThe PUMD12,115 is a great choice for switching and logic applications. It provides excellent switching performance, low on-state resistance and high current capability. It also features a shielded photosensitive element and dynamic biasing technology which helps improve switching performance and reduce switching power losses. With its high quality and fast switching capability, the PUMD12,115 is an ideal device for many switching and logic applications.

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