PUMD30,115 Allicdata Electronics
Allicdata Part #:

PUMD30,115-ND

Manufacturer Part#:

PUMD30,115

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP 6TSSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PUMD30,115 datasheetPUMD30,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03788
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: --
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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The PUMD30,115 is a bipolar semiconductor device designed for use as high voltage transistor array. It consists of two power transistors and a protecting diode. The input contains two N-channel high voltage MOSFETs connected to an amplifier, which is utilized to improve the dynamic response, provide low offset, and allow for various pre-bias conditions.

The PUMD30,115 is used primarily in power system applications such as high voltage switching, audio amplification, and high voltage regulation. It is designed to provide higher voltage and power supply rated currents than others of its kind. Its maximum drain-source voltage is 30 V and the maximum drain current at this voltage is 115A.

The main characteristic of the PUMD30,115 is its high voltage friendly design. It is equipped with active braking circuitry which accommodates inrush current at the time of initial switch turn-on. It also offers a soft start feature that prevents inrush current from exceeding the maximum levels. Likewise, the MOSFET output stage reduces turn-off losses and provides optimized performance when operating in applications requiring inductive loads.

The PUMD30,115 operates as an array of two bipolar transistors, each of which has its own collector load resistor. The transistors are biased such that, when the input signal is low, the upper transistor is turned on and the lower transistor is turned off. When the input is high, the upper transistor is turned off and the lower transistor is turned on. This action is referred to as "push- pull" switching.

The internal diode of the PUMD30,115 provides protection from over-voltage induced by a short circuit or inductive surges. The diode is connected across the collector and emitter of the upper pair of transistors and when the upper transistor is turned on, it helps prevent the lower transistor from being damaged by over-voltage.

The PUMD30,115 is a pre-biased, bipolar transistor array which includes a unique combination of features that enable high voltage and high power applications. It is capable of providing high efficiency and fast switching with low turn-on losses and high voltage protection. The array offers a multitude of protection features such as over-voltage and over-current protection, as well as soft start capability to reduce inrush currents. It is a versatile device that is suitable for a wide range of high voltage and high power applications.

The specific data is subject to PDF, and the above content is for reference

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