Allicdata Part #: | QS8J12TCR-ND |
Manufacturer Part#: |
QS8J12TCR |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 12V 4.5A TSMT8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 4.5A 550mW Sur... |
DataSheet: | QS8J12TCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.22061 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 6V |
Power - Max: | 550mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | TSMT8 |
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QS8J12TCR Application Field and Working Principle
The QS8J12TCR is a high performance integrated power amplifier module from Sanyo Semiconductor. It incorporates two MOSFETs and two transistors, comprising a class AB power amplifier and driver stages. The device is widely used in a variety of audio and power applications, including home and car audio systems, as well as for automotive audio. This paper will provide an overview of the application field and working principle of the QS8J12TCR.
Application Field
The QS8J12TCR is ideally suited for the production of high-power audio. It is ideal for home audio applications, car audio and automotive audio devices. It is well suited for high-fidelity audio products, where superior sound reproduction is desired. The device is designed to be driven by low-level audio signals, and provides higher gain than conventional amplifiers, resulting in improved low-level audio performance. The QS8J12TCR is also well suited for use in audio applications where a high-power output is desired, such as in sound reinforcement systems, or in other applications where increased output power is needed.
Working Principle
The QS8J12TCR is an integrated power amplifier module; this means that it includes both the driver and power stages in a single, compact package. The module has four component parts—two MOSFETs and two transistors—that work together in a specific way to achieve the output power from the device. The two MOSFETs make up the power amplifier stage; they are configured in a Class AB configuration, meaning that they are biased slightly off of cutoff, which gives the device slightly higher power capabilities than a traditional Class A configuration. The two transistors, meanwhile, make up the driver stage; they act as amplifiers, taking the low-level input signal, and boosting it before sending it to the power stage for amplification. The combination of the two stages yields excellent power performance, as well as improved sound quality over traditional configurations.
Conclusion
The QS8J12TCR is a high performance integrated power amplifier module from Sanyo Semiconductor. It incorporates two MOSFETs and two transistors, comprising a class AB power amplifier and driver stages. The device is widely used in a variety of audio and power applications, including home and car audio systems, as well as for automotive audio. The module has a Class AB power amplifier stage, and a driver stage comprised of two transistors that act as amplifiers. This combination yields impressive power performance and improved sound quality. The QS8J12TCR is well-suited for audio applications where high-power output is desired.
The specific data is subject to PDF, and the above content is for reference
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