Allicdata Part #: | QS8J5TR-ND |
Manufacturer Part#: |
QS8J5TR |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 30V 5A TSMT8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 5A 600mW Surfa... |
DataSheet: | QS8J5TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.40673 |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 10V |
Power - Max: | 600mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | TSMT8 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
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FET arrays are a type of transistor array that are composed of several individually addressable transistors that functionality as a single unit. The most commen type of FET array is the QS8J5TR, which is a Metal Oxide Semiconductor FET (MOSFET). The QS8J5TR is a type of power MOSFET that has been designed to provide low on-resistance and low gate charge.
A QS8J5TR array is composed of six independent N-channel MOSFETs that are packaged in a single device. These transistors provide exceptional switching performance due to their low on-resistance and low gate charge. This helps to reduce power consumption when switching loads and increases the efficiency of the switching process. Additionally, the QS8J5TR power MOSFET array also provides high impedance levels, which can be raised or lowered by adjusting the gate voltage.
The QS8J5TR can be used in a variety of applications, including DC-DC converters, inverters, light drivers and motor controllers. Additionally, the QS8J5TR is capable of driving a variety of gate voltages, which makes it ideal for applications that require various voltages to be supplied. Due to its low on-resistance and low gate charge, the QS8J5TR is also suitable for high frequency switching applications.
The QS8J5TR is a type of N-channel MOSFET array that utilizes a source-gate structure. Each transistor within the array can be separately addressed, allowing for controlled switching on each channel. The number of channels provided by the QS8J5TR makes it ideal for applications that require multiple transistors to be operated in parallel. Additionally, the QS8J5TR is compatible with a variety of logic levels, making it more versatile than standard MOSFETs.
The QS8J5TR is able to provide exceptional performance due to its low on-resistance and low gate charge. These two factors help to reduce switching loss and power consumption, while also increasing the speed of the switching process. The QS8J5TR is also able to provide high impedance levels, which can be adjusted by changing the gate voltage.
The QS8J5TR is a highly versatile power MOSFET array that is capable of driving a variety of gate voltages. This makes it ideal for applications such as DC-DC converters, inverters, light drivers and motor controllers. Additionally, its low on-resistance and low gate charge make the QS8J5TR well suited for high frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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