QS8J13TR Discrete Semiconductor Products |
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Allicdata Part #: | QS8J13TR-ND |
Manufacturer Part#: |
QS8J13TR |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 12V 5.5A TSMT8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 5.5A 1.25W Sur... |
DataSheet: | QS8J13TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.19855 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 5.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 6300pF @ 6V |
Power - Max: | 1.25W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | TSMT8 |
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QS8J13TR is a type of Field Effect Transistor (FET) that utilizes Metal Oxide Semiconductor (MOS) technology. The purpose of the FET is to act as an amplifier of electronic signals. It is used in a wide range of electronic equipment, and its applications include automotive, aerospace, communication, computer, and security systems, to name a few.The QS8J13TR FETs can be used as both a single device in most applications, or in an array of multiple FETs to increase the current capacity and power output of the device. The array can be configured in series or in parallel, depending on the specific requirements of the application.The FET works by designating a region of semiconductor material as the Gate, which is connected to a control voltage source. This voltage source is usually referred to as the Gate Voltage and can be controlled either directly or indirectly with a signal. When a positive voltage is applied to the Gate, it creates an electric field that causes a conductive \'channel\' to form between the source and the drain of the FET.The current that flows through this channel is proportional to the Gate Voltage, and can also be regulated using other techniques such as pulse modulation, frequency modulation, and pulse-width modulation. As the Gate Voltage is adjusted, the current that passes through the FET is varied, allowing the FET to act as an amplifier.The main benefit of using QS8J13TR FETs is their speed and low power consumption, making them ideal for applications that need to act quickly without consuming a lot of energy. Additionally, the FETs have very low noise and distortion levels, which are important in applications such as audio and video equipment, where signal clarity is paramount.The QS8J13TR FETs can also be coupled with other components, such as resistors and capacitors, to enhance their performance. This allows the FETs to be used in a variety of different applications, from amplifying signals to controlling relays and motors, depending on the requirements of the application.Overall, the QS8J13TR FETs are a versatile device with a wide range of applications. They are relatively simple to use, require very low power consumption, and are able to operate quickly and accurately. As such, they are a popular choice for many electronic equipment applications.
The specific data is subject to PDF, and the above content is for reference
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