QS8J4TR Allicdata Electronics

QS8J4TR Discrete Semiconductor Products

Allicdata Part #:

QS8J4TR-ND

Manufacturer Part#:

QS8J4TR

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2P-CH 30V 4A TSMT8
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 4A 550mW Surfa...
DataSheet: QS8J4TR datasheetQS8J4TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.28096
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Power - Max: 550mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8
Description

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The QS8J4TR transistors are a type of Field-Effect Transistor (FET), specifically a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They are known as MOSFETs (MOFSET) arrays because they consist of several MOSFETs combined into one package, normally a surface-mounted technology (SMT) package. QS8J4TR transistors are integrated circuits (IC) that are designed to maximize circuit performance, reduce the size and number of components needed for a circuit design, and reduce cost.

A MOSFET is an insulated gate transistor that uses a voltage signal on its gate relative to the source terminal of the transistor to control current through its drain-source channel. It is a voltage-controlled device and is used in many applications due to its low power consumption, high speed and small size. The MOSFET has three terminals, the gate, source and drain and works by using a voltage applied to the Gate terminal of the transistor to control current from the source to the drain. When the Gate terminal is positively charged, current will flow from the source to the drain. However, when the Gate terminal is negatively charged, no current can flow. This is known as boosting the gate, as the gate and channel become "charged" and able to conduct current.

QS8J4TR MOSFET arrays are designed with the specific intention of making it easier to use multiple FETs in the same circuit design. Generally, the FETs in a QS8J4TR array are pre-configured and optimized to reduce the amount of power consumption and heat dissipation associated with FETs. They also decrease the amount of wiring needed in the circuit design as all the FETs in the array are connected to each other and can be easily switched between blocks of circuitry.

QS8J4TR transistors are used for a variety of applications. They are used in switching power supplies and voltage regulator modules, amplifier circuits, digital signal processing systems and in robotics. They can also be used to implement logic functions such as AND, OR, NAND and NOR. They are also useful for creating pulse-width modulation (PWM) for controlling motors and other devices.

In addition to their use in circuit design, QS8J4TR transistors are also used in the fabrication of solar cells. An array of FETs can be used to modulate the voltage to optimum levels for solar cells. This reduces power consumption and improves the efficiency of the solar cells.

Overall, QS8J4TR transistors are an important component in many circuit designs and applications due to their low power consumption, high speed and small size. The advantages of using a MOSFET array makes them the preferred choice for many applications and facilitates the design of complex circuits.

The specific data is subject to PDF, and the above content is for reference

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