QS8J1TR Allicdata Electronics

QS8J1TR Discrete Semiconductor Products

Allicdata Part #:

QS8J1TR-ND

Manufacturer Part#:

QS8J1TR

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2P-CH 12V 4.5A TSMT8
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 4.5A 1.5W Surf...
DataSheet: QS8J1TR datasheetQS8J1TR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.29618
Stock 3000Can Ship Immediately
$ 0.33
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Base Part Number: *J1
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The QS8J1TR transistor is a Field Effect Transistor (FET) that can be used for a variety of applications, ranging from power management and sensing to communications and audio amplification. It is an 8-pin DIP package, with a total circuit power rating of 50mW. It is also able to manage high-frequency signals, making it a suitable choice for many different types of applications.

The key component of this transistor is the metal-oxide-semiconductor field effect transistor, or MOSFET, which is the primary component of all Field Effect Transistors. The MOSFET is composed of two main components, the source and the drain. Electrically, these two components behave like semiconductors, meaning that they are able to both conduct and block the flow of electrons. The difference between the source and the drain is that the source is connected to the negative side of the power supply, and the drain is connected to the positive side.

The QS8J1TR also utilizes an array of FETs in order to optimize the functioning of the device. In an array of FETs, each FET is connected to two other FETs, forming a three-way connection. The source and drain of each FET are connected to the other two FETs, forming an electrical pathway between the two. By utilizing an array of FETs, the QS8J1TR can enable greater amplification and better signal output than a single FET.

The QS8J1TR offers a number of other benefits, such as low noise levels and high speed. The transistor’s low-noise performance is a result of its structure and construction, which minimize the build-up of static charges. This, combined with the FET’s high frequency capabilities, makes the QS8J1TR capable of handling digital signals without any signal distortion or signal degradation. In addition, the transistor’s signal to noise ratio is quite low, meaning that it is able to amplify low-level signals without introducing any additional signal noise.

The QS8J1TR can be used in a wide variety of applications, ranging from power management and sensing to communications and audio amplification. It is a powerful and reliable FET solution that is capable of handling both low-level signals and high-frequency signals. The wide range of benefits offered by the QS8J1TR makes it an ideal choice for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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