R1LP0108ESA-5SI#S0

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package:	32-sTSOP
Base Part Number:	R1LP0108E

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Introduction:

R1LP0108ESA-5SI#S0 is a high-performance, low-power SRAM (Static Random Access Memory) device. It is a 5 Mbit, 8-bit wide device, optimized for low-power applications. The device is fabricated in a 0.18um process.

Application Field:

The high-performance, low-power SRAM R1LP0108ESA-5SI#S0 is applicable in many applications including computers, embedded systems, medical applications, consumer products, communications, automotive and industrial applications. It is a versatile solution for applications that require reliable data access, and low power operation.

Working Principle:

SRAMs are volatile memory, which means that the memory will be lost when power is removed from the system. The SRAMs are composed of six-transistor cells that make up the basic memory unit, which can store a single byte. Each SRAM cell can be thought of as a tiny circuit that stores information in the form of bits. The inputs of the circuit are the operating power (VCC) and two address signals (A0 and A1). The output of the circuit is the data or bit that is stored in that cell. When the voltage on A0 and A1 is high (1) or low (0), it will determine which cell is accessed. For example, if A0 and A1 are both 1, then the fourth cell in the memory will be selected. When the cell is selected, then its data can be read or written depending on whether the read or write line is activated. When data is written to the SRAM cell, it is stored there until power is removed. When power is removed, the SRAM cell resets to 0.

Conclusion:

The R1LP0108ESA-5SI#S0 is a high-performance, low-power SRAM device which is optimized for low-power applications. It is applicable in many applications including computers, embedded systems, medical applications, consumer products, communications, automotive and industrial applications. It works on the principle of selecting a cell out of 6-transistor cells, accessing it and writing or reading data from it. When data is written or stored in the device, it is stored there until power is removed.

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