R1LP0108ESF-5SI#B1 Allicdata Electronics
Allicdata Part #:

R1LP0108ESF-5SI#B1-ND

Manufacturer Part#:

R1LP0108ESF-5SI#B1

Price: $ 2.66
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 1M PARALLEL 32TSOP
More Detail: SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-TS...
DataSheet: R1LP0108ESF-5SI#B1 datasheetR1LP0108ESF-5SI#B1 Datasheet/PDF
Quantity: 1000
1 +: $ 2.41920
10 +: $ 2.19429
25 +: $ 2.14679
50 +: $ 2.13494
100 +: $ 1.91463
250 +: $ 1.90751
500 +: $ 1.83726
1000 +: $ 1.74676
5000 +: $ 1.55387
Stock 1000Can Ship Immediately
$ 2.66
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP (8x20)
Description

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R1LP0108ESF-5SI#B1 is a Non-Volatile Memory (NVM) integrated circuit from Renesas Electronics. It is an ultra-low power Non-Volatile Memory (NVM) for automotive applications and other embedded systems. R1LP0108ESF-5SI#B1 memory can remain data stored even if the power is lost. NVM is used to store parameters and configuration of various embedded systems as it retains values even if the system is powered off. It can store up to 512 bytes of data, which can be configured and stored as your requirements.

R1LP0108ESF-5SI#B1 has wide applications in many embedded systems. It is widely used in Autonomous Car Engine Control, Motor Control, Proximity Sensor, Vehicular Transmission Control, Telecommunication Applications, Health Monitoring, and Industrial Machine Applications etc. It is not just limited to these applications, but also can be used for other purpose according to the memory configuration and settings. As a tiny power consuming memory chip, it is also used in low power applications.

R1LP0108ESF-5SI#B1 has a wide operating temperature range of -40 °C to + 125 °C, so it can be used in extreme temperature condition, like under hood of a car. It is also available in HSABJ package type, which is suitable for side thermister and top thermister applications.

In terms of working principle, R1LP0108ESF-5SI#B1 uses two kinds of techniques that makes NVM differs from RAM: Non-Volatile Flash Memory and EEPROM-type Flash Memory. The Non-Volatile Flash Memory is a type of memory that can be programmed and then the stored data is retained when the power source is turned off. EEPROM-type Flash Memory is a type of non-volatile memory that uses a portion of the flash memory blocks in which data is stored in separate cells. The cells can be individually written which results in more flexibility when data is stored.

R1LP0108ESF-5SI#B1 also uses special techniques such as error correction circuit and wear-leveling algorithm to extend the lifetime of flash memory. Error correction circuit helps in correcting and protecting data from being restored or rewritten in case of any malfunction. Wear-leveling algorithm helps in balancing the data across the whole memory space, so that memory devices get an equal amount of read and erase cycles.

Non-Volatile Memory, like R1LP0108ESF-5SI#B1, requires only milliseconds to retailers data. So they are used when low latency and high speed are needed in applications. Above technologies together, make R1LP0108ESF-5SI#B1 memory chip a best choice for various embedded systems.

The specific data is subject to PDF, and the above content is for reference

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