R1LP0408DSB-5SI#S0

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-SOIC (0.400", 10.16mm Width)
Supplier Device Package:	32-TSOP II
Base Part Number:	R1LP0408

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R1LP0408DSB-5SI#S0 - Memory Application Field and Working Principle

Memory plays an important role in modern computing. It stores data in a digital format, providing the necessary data retrieval and processing power to help optimize system performance. One type of memory, the R1LP0408DSB-5SI#S0, helps to take memory technology even further, providing a reliable and high-capacity solution for a variety of applications.

General Overview

The R1LP0408DSB-5SI#S0 is a four gigabyte (4GB), double data rate (DDR) synchronous dynamic random access memory (SDRAM) module. It uses the Low Power Double Data Rate (LPDDR) DRAM technology, which is 24bit double data rate and clock synchronous RAM. The module has a memory bank of 2GB, a storage capacity of 4GB, and a bandwidth of 5GB/s. It is a single-channel SDRAM device with a maximum write/read speed of 2.5GB/s. The module also has an integrated voltage regulator circuit, which enables the module to be used in a wide range of operating voltages. In terms of its power consumption, the R1LP0408DSB-5SI#S0 has an idle power consumption of 0.4W and an active power consumption of 0.75W. The module is also designed to be compatible with a variety of other devices, including ARM processors, Intel processors, and mobile GPUs. It also features support for multiple operating systems such as Windows, Linux, and Android.

Application Fields

The R1LP0408DSB-5SI#S0 is ideal for a variety of applications. One of the main application fields is in embedded computing, where the high-capacity and reliable performance of the device make it an ideal component for powering a variety of industrial and consumer products. This module can also be used in gaming consoles, high-performance computing systems, and medical imaging systems. The R1LP0408DSB-5SI#S0 is also an ideal choice for mobile devices, due to its high-speed and low power consumption. This makes it a good choice for mobile devices such as tablets, phones, and wearables. Additionally, the R1LP0408DSB-5SI#S0 can be used in automotive applications, providing reliable and high-capacity memory solutions for a variety of cars and other vehicles.

Working Principle

At its most basic, the R1LP0408DSB-5SI#S0 memory module works in the same way as other types of memory. The data is stored in cells, and each cell contains a single bit of information. These cells are arranged in a grid-like structure called a Northbridge. When data needs to be read or written, the module reads the values from or writes the data to the cells in the Northbridge. The data is then transmitted to the CPU or other components on the system.The R1LP0408DSB-5SI#S0 module also uses the Low Power Double Data Rate (LPDDR) DRAM technology. This technology enables the module to provide a much faster data transfer rate than other types of memory, as well as lower power consumption. This is possible because the LPDDR technology uses fewer signals for data transfer, and it also makes use of a higher clock speed.

Conclusion

The R1LP0408DSB-5SI#S0 is an advanced type of memory module which offers users a high-capacity and reliable storage solution. This module uses the Low Power Double Data Rate (LPDDR) DRAM technology, which provides faster data transfer rates and lower power consumption than other types of memory. The module is suitable for a variety of applications, including embedded computing, gaming consoles, high-performance computing systems, and mobile devices. It is also well suited for automotive applications, providing reliable and high-capacity memory solutions.

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