R1LP5256ESP-7SI#S0 Allicdata Electronics
Allicdata Part #:

R1LP5256ESP-7SI#S0-ND

Manufacturer Part#:

R1LP5256ESP-7SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 256K PARALLEL 28SOP
More Detail: SRAM Memory IC 256Kb (32K x 8) Parallel 70ns 28-S...
DataSheet: R1LP5256ESP-7SI#S0 datasheetR1LP5256ESP-7SI#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOP
Base Part Number: R1LP5256E
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

It is important to have a good understanding of the application field and working principle of the R1LP5256ESP-7SI#S0 memory. This is a type of flash memory designed for use in embedded systems. It is ideal for storage of program code and data, as well as for storing configuration information for FPGAs and other embedded devices.

The R1LP5256ESP-7SI#S0 memory is based on a single-level cell (SLC) flash memory architecture. It is designed to provide high-performance data storage and quick read/write access times. It features an 8-bit interface, a maximum bus clock frequency of 100MHz, and a maximum read speed of up to 60MB/s. It also offers up to 4KByte page size, up to 128MByte density, and 128Kbyte write buffer.

The R1LP5256ESP-7SI#S0 memory is typically used in situations where high performance, compact size, and low power consumption are important. It is ideal for FPGAs, industrial PCs, and automotive systems, as well as portable and embedded medical devices, consumer electronics, and telecommunications systems.

The application field of the R1LP5256ESP-7SI#S0 memory is further extended by its wide range of support for a variety of industry standard interfaces, such as SPI, SOP, and DIP. This makes it easy to integrate the memory into a wide variety of applications. Additionally, the memory is available in a number of different packages, including TSOP, BGA, and SOIC, allowing for flexible circuit board routing.

The working principle of the R1LP5256ESP-7SI#S0 memory is based on NAND flash technology. NAND flash works by storing data in cells, each of which is composed of a number of transistors connected in series. The cells are then organized into blocks, which are in turn organized into pages. A block can be erased, written to, or read from all at once, while a page can be read or written to one bit at a time.

Data is stored in the memory as strings of bits, which are organized into pages. To read data from the memory, a read command is sent to the memory. Data is then retrieved from the appropriate page. To write data to the memory, the memory is first erased and then the write command is sent. The data is then written in the appropriate pages.

In summary, the R1LP5256ESP-7SI#S0 memory is a highly advanced flash memory designed for use in embedded systems. It features a single-level cell (SLC) flash memory architecture, 8-bit interface, and a maximum bus clock frequency of 100 MHz. It supports a variety of industry standard interfaces, such as SPI, SOP, and DIP, and is available in a number of different packages. The working principle of the memory is based on NAND flash technology, which allows for quick read and write access times.

The specific data is subject to PDF, and the above content is for reference

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