Allicdata Part #: | R1LP5256ESA-5SI#S1-ND |
Manufacturer Part#: |
R1LP5256ESA-5SI#S1 |
Price: | $ 1.93 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 256K PARALLEL 28TSOP |
More Detail: | SRAM Memory IC 256Kb (32K x 8) Parallel 55ns 28-T... |
DataSheet: | R1LP5256ESA-5SI#S1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.74676 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-TSSOP (0.465", 11.80mm Width) |
Supplier Device Package: | 28-TSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MemoryThe R1LP5256ESA-5SI#S1 is a type of memory device from Renesas Electronics. The series is specifically designed for low-power, embedded applications that require large-capacity and reliable non-volatile memory. In particular, this device offers an efficient solution for applications with high-performance data-storage requirements such as wearable electronics, automotive infotainment systems, digital signage, medical devices and smart meters.
This device is based on a high-speed, low-power Semiconductor Memory Technology (SMT) architecture that includes a combination of single-port Flash memory cells, non-volatile Flash memory, static random access memory (SRAM) and static programmable memory (SPM). The device is highly flexible and can be implemented in an array of applications.
The device is designed for embedded applications and incorporates an array of features to ensure reliable, low-power memory operation. The single-port Flash memory cells provide fast, sequential access to memory and are dynamically configurable to support different types of data access. The device is further enhanced by a wide array of power saving features that can reduce power consumption and extend battery life.
The device is also equipped with a wide range of dynamic write control and error correction mechanisms that help to ensure reliable storage and retrieval of data. The error detection and correction (EDC) system is used to check for errors and then replace erroneous data with data retrieved from the Flash memory. The device also incorporates an integrated watchdog timer to monitor the progress of write operations and correct any errors that may occur.
The device is also designed to minimize speed degradation due to temperature. Temperature monitoring and speed reduction features can help to ensure optimum memory performance in extreme temperature conditions.
In summary, the R1LP5256ESA-5SI#S1 is an extremely versatile and reliable memory device designed for embedded applications. Its combination of high performance memory cells, extensive power saving features, reliable EDC and watchdog timer functionality, and temperature monitoring capabilities make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
R1LP0108ESN-5SI#B0 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LP0108ESN-5SI#S0 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LP0108ESN-7SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LP0408DSB-5SI#B1 | Renesas Elec... | 4.27 $ | 1000 | IC SRAM 4M PARALLEL 32TSO... |
R1LP5256ESA-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 256K PARALLEL 28T... |
R1LP0108ESA-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LP0108ESF-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LP0108ESA-5SI#S1 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LP0108ESF-5SI#S1 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LP0408DSB-5SI#S1 | Renesas Elec... | 3.05 $ | 1000 | IC SRAM 4M PARALLEL 32TSO... |
R1LP5256ESA-5SI#S1 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 256K PARALLEL 28T... |
R1LP0108ESA-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LP0108ESA-5SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LP0108ESF-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LP0108ESF-5SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LP5256ESA-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 256K PARALLEL 28T... |
R1LP5256ESA-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 256K PARALLEL 28T... |
R1LP5256ESP-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 256K PARALLEL 28S... |
R1LP5256ESP-7SR#B0 | Renesas Elec... | -- | 1000 | IC SRAM 256K PARALLEL 28S... |
R1LP0408DSB-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 32TSO... |
R1LP0408DSP-5SI#B0 | Renesas Elec... | 4.27 $ | 1000 | IC SRAM 4M PARALLEL 32SOP... |
R1LP0408DSP-5SI#S0 | Renesas Elec... | 3.05 $ | 1000 | IC SRAM 4M PARALLEL 32SOP... |
R1LP0408DSP-7SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 32SOP... |
R1LP5256ESA-5SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 256K PARALLEL 28T... |
R1LP5256ESP-5SI#S0 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 256K PARALLEL 28S... |
R1LP5256ESP-7SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 256K PARALLEL 28S... |
R1LP5256ESP-7SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 256K PARALLEL 28S... |
R1LP0408DSP-7SI#B0 | Renesas Elec... | 7.25 $ | 1000 | IC SRAM 4M PARALLEL 32SOP... |
R1LP0408DSP-7SR#B0 | Renesas Elec... | 7.25 $ | 1000 | IC SRAM 4M PARALLEL 32SOP... |
R1LP0108ESN-7SI#S0 | Renesas Elec... | -- | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LP0408DSB-5SI#S0 | Renesas Elec... | 5.22 $ | 1000 | IC SRAM 4M PARALLEL 32TSO... |
R1LP0408DSP-7SI#S0 | Renesas Elec... | 5.22 $ | 5000 | IC SRAM 4M PARALLEL 32SOP... |
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