R1LP0108ESF-5SI#S0 Allicdata Electronics
Allicdata Part #:

R1LP0108ESF-5SI#S0-ND

Manufacturer Part#:

R1LP0108ESF-5SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 1M PARALLEL 32TSOP
More Detail: SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-TS...
DataSheet: R1LP0108ESF-5SI#S0 datasheetR1LP0108ESF-5SI#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP (8x20)
Base Part Number: R1LP0108E
Description

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Memory is an important part of many modern computing systems. It is used to store and retrieve data in a manner that is both efficient and reliable. The R1LP0108ESF-5SI#S0 is a type of memory that provides a wide range of features, making it suitable for many applications. In this article, we will explore the application fields and working principles of the R1LP0108ESF-5SI#S0.

The R1LP0108ESF-5SI#S0 is most commonly used in applications that require high-density memory, such as large databases or complex simulations. It is also used in applications that require fast access to data or low latency. Its high performance, low power consumption, and low cost make it ideal for these types of applications.

The R1LP0108ESF-5SI#S0 is a type of dynamic random access memory (DRAM). It utilizes a "cell plate" design, which allows it to store and retrieve data faster than other offerings. The cell plate consists of a matrix of cells each containing a data bit and circuitry to store and retrieve the bit. The cells are arranged in a rectangular array, with each cell\'s neighboring cells forming a two-dimensional array. Each cell is connected to two cross-bank row and column select lines, allowing for a faster and more efficient data retrieval process.

The R1LP0108ESF-5SI#S0 also utilizes advanced error-correction technology to ensure data accuracy and integrity. It uses an integrated error-correction circuit that performs error-correction on the data stored in each cell before it is retrieved. This error-correction process helps to ensure that the data retrieved is accurate and reliable.

The R1LP0108ESF-5SI#S0 is designed for high-speed operation and has a fast write speed of up to 3.2GB/s. It is also able to sustain high read speeds of up to 6GB/s. This performance makes it suitable for applications that require high-performance data processing and storage.

The R1LP0108ESF-5SI#S0 is also designed to require a minimal amount of energy in order to operate, making it energy-efficient. This low power requirement also helps to reduce the amount of heat generated by the memory, making it ideal for applications that require long periods of operation without the need of a cooling system.

The R1LP0108ESF-5SI#S0 is one of the most advanced and reliable types of memory technology available on the market today. Its wide range of features makes it suitable for many different application fields, from large databases to complex simulations. Its fast access times, low power requirement, and high reliability make it an ideal choice for high-performance computing applications.

The specific data is subject to PDF, and the above content is for reference

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