R1LP5256ESP-5SI#B0

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM
Memory Size:	256Kb (32K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	28-SOIC (0.330", 8.38mm Width)
Supplier Device Package:	28-SOP
Base Part Number:	R1LP5256E

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R1LP5256ESP-5SI#B0 Memory Application Field and Working Principle

R1LP5256ESP-5SI#B0 is a type of memory specifically designed for use in electronic industries. It is a type of Dynamic Random Access Memory (DRAM), which uses capacitors and semiconductors to store and retrieve data. The R1LP5256ESP-5SI#B0 was designed by Renesas, a semiconductor and electronics company based in Japan.The R1LP5256ESP-5SI#B0 memory chip is a type of Single Data Rate (SDR) DRAM, which works by storing each bit of data in a capacitor. When the chip receives an electric signal, the capacitors which were charged will be discharged, creating a 1 in the memory, and for capacitors not charged, the result is 0. The DRAM works by repeatedly charging the capacitor and discharging it, thus creating a dynamic process in order to read or write data.Given the advanced nature of the R1LP5256ESP-5SI#B0 memory chip, it serves many applications in the electronics and automotive industries. One of its main uses is in the medical industry, where it is used to store and transfer advanced medical imaging data. The chip is also used in industrial automation, where it helps control high-performance machinery. Its durability and ability to handle large amounts of data makes it ideal for automotive applications like airbags and autonomous car systems.In terms of its working principle, the R1LP5256ESP-5SI#B0 memory chip functions with a simple but efficient architecture. The chip is composed of multiple cells and each cell consists of two capacitors and a switch. When the cells receive an electric signal, the switch flips and either charges or discharges the cells’ two capacitors. This, in turn, creates a 1 or a 0 for each cell depending on the strength of the signal.The R1LP5256ESP-5SI#B0 memory chip is a highly reliable component due to its advanced design, and is able to store vast amounts of data in a short period of time. On top of this, its low power consumption makes it ideal for many applications. In conclusion, the R1LP5256ESP-5SI#B0 is a versatile and efficient component which has numerous uses in the modern world.

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