Allicdata Part #: | R4008ANDTL-ND |
Manufacturer Part#: |
R4008ANDTL |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 10V DRIVE CPT |
More Detail: | N-Channel 400V 8A (Ta) 20W (Tc) Surface Mount CPT3 |
DataSheet: | R4008ANDTL Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.58685 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 20W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | CPT3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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R4008ANDTL Application Field and Working Principle
R4008AN-DTL, also known as a trench-type Power MOSFET, is a metal-oxide semiconductor field-effect transistor (MOSFET) that is specifically designed for industrial power applications. It is used in a wide range of electronic applications from its high-current, high-voltage tolerance to its low on-state resistance, low gate charges, high switching frequency and wide dynamic range. This article aims to provide an overview of its application field, design considerations and working principle.
R4008ANDTL is used for driving loads in applications like motor drives, PFC power converters, power amplifiers, ac motor drives and DC motor drives. It is also used in inverters and power electronic converters, such as AC to DC, DC to DC and DC to AC applications. The R4008ANDTL has a maximum drain-source voltage of 400V and a maximum drain current of 8A, making it suitable for many power applications. It has a low threshold voltage and low on-resistance, which makes it capable of handling high supply voltages with minimal losses.
When designing a system with the R4008ANDTL, the designer must consider its power dissipation, operating temperature range and maximum voltage or current. It is important to ensure that its power dissipation is no greater than its maximum thermal limit, as exceeding this could cause the device to overheat and potentially fail. The R4008ANDTL is designed to operate in a temperature range of 0 to 150⁰C; if the operating temperature exceeds this range, the device performance and reliability may be degraded.
The R4008ANDTL is a depletion-mode power MOSFET. Its working principle is based on the charge transfer between the source, gate and drain terminals. A voltage property is applied between the source and the gate terminal, which causes the gate to ‘attract’ charge from the source. The charge attracts electrons from the source, resulting in an electron current or ‘channel’ connecting the source and the drain terminal. This channel is controlled by the voltage between the source and gate; when the voltage between these two terminals is increased, the channel expands and the current increases.
R4008ANDTL is a widely used power MOSFET due to its low on-state resistance, high switching frequency and wide dynamic range. It is suitable for various applications in the field of power electronics and can be deployed in medium to high-power applications, such as inverters, motor drives, and power electronic converters. Its working principle is based on the charge transfer between the source, gate and drain terminals, which is governed by the voltage between the source and gate terminals.
The specific data is subject to PDF, and the above content is for reference
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