Allicdata Part #: | R5009ANX-ND |
Manufacturer Part#: |
R5009ANX |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 500V 9A TO220 |
More Detail: | N-Channel 500V 9A (Tc) 50W (Tc) Through Hole TO-22... |
DataSheet: | R5009ANX Datasheet/PDF |
Quantity: | 500 |
1 +: | $ 0.95130 |
10 +: | $ 0.84231 |
100 +: | $ 0.66566 |
500 +: | $ 0.51621 |
1000 +: | $ 0.40753 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 720 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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R5009ANX Transistor
The R5009ANX is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Rohm Semiconductor. This product is intended for consumer electronics, low voltage applications, and power management.
Application Field
The R5009ANX is suitable for a variety of consumer electronics, including:
- Switching power supplies
- Three-phase motor drives
- Voltage regulators
- Solid-state relays
- Battery management
- Input/output buffers
The R5009ANX performs well in medium to high frequency switching applications, making it suitable for applications such as DC-DC converters and adapters, Class D amplifiers, motor control, and more.
Working Principle
MOSFET transistors work by using electric fields to control the flow of current in a circuit. A MOSFET is composed of a gate, a source and a drain. The electric field of the gate can be used to control the flow of electric current from the source to the drain. In the case of the R5009ANX, the N-channel MOSFET, a positive voltage applied to the gate allows current to flow freely between the source and drain, while a negative voltage applied to the gate shuts off the current.
The R5009ANX features a low threshold voltage, low input capacitance and minimal ‘on’ resistance. This makes it well-suited for low voltage applications where power management is critical. In addition, the R5009ANX offers excellent on-state and off-state control characteristics and has a high-speed switching capability.
Conclusion
The R5009ANX is an N-channel MOSFET suitable for a variety of applications, including switching power supplies, voltage regulators and battery management. It features low threshold voltage, low input capacitance, minimal on-resistance and excellent on-state and off-state control characteristics. It is ideal for low voltage applications, where power management and energy efficiency are critical.
The specific data is subject to PDF, and the above content is for reference
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