Allicdata Part #: | RAQ045P01MGTCR-ND |
Manufacturer Part#: |
RAQ045P01MGTCR |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 1.5V DRIVE PCH MOSFET |
More Detail: | |
DataSheet: | RAQ045P01MGTCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10107 |
Series: | * |
Part Status: | Not For New Designs |
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RAQ045P01MGTCR Application Field and Working Principle
As one of the main families of semiconductor transistors, Field Effect Transistors (FETs) are widely used for applications requiring a high input impedance. FETs are unipolar transistors that come in various configurations, such as MOSFETs and JFETs, which feature different characteristics.
The RAQ045P01MGTCR is a Single P-Channel MOSFET (PMOS) available as a module from Advanced Power Electronics Corp. It is a reliable, high-performance part rated for a maximum drain-source voltage of -20V and a maximum forward current of 7A. Additionally, the RAQ045P01MGTCR has a low Gate-Source threshold voltage of -2.2V and a low input capacitance of 22pF. Due to these parameters, the RAQ045P01MGTCR is well suited for fast switching applications.
Working Principle
MOSFETs are a type of Field Effect Transistor that use an insulated gate to control the flow of electric current. The MOSFET consists of three terminal regions: the source, the drain, and the gate. The gate terminal is Metal Oxide Semiconductor (MOS) – hence the nickname “metal-oxide-semiconductor (MOS) FETs” – and is insulated from the two other terminals. This insulation layer is referred to as the “gate-oxide.”
When a voltage is applied to the gate terminal, the gate-oxide creates an electric field that modulates the conductivity of the drain-source channel. This transistor, like all FETs, is a voltage-controlled device as the current flowing through the channel is a direct result of the gate voltage applied to the device. This allows for simple on/off switching, as well as analog control of the current flow.
Application Field
The RAQ045P01MGTCR is especially suited for fast switching applications due to its low switching time, high input capacitance and low threshold voltage. It is typically used in power switching circuits, particularly for DC-DC converters. Additionally, due to the large current rating and low threshold voltage, this part is suitable for low-side switching applications. This part is also used in LED lighting applications and automotive power control, as well as many other applications.
In summary, the RAQ045P01MGTCR is a reliable, high-performance PMOS suitable for a wide range of applications requiring fast switching capabilities. Its low threshold voltage and low input capacitance, combined with its high drain-source voltage and current rating, make it an ideal choice for applications ranging from DC-DC converters to power switching and automotive power control.
The specific data is subject to PDF, and the above content is for reference
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