RAQ045P01TCR Discrete Semiconductor Products |
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Allicdata Part #: | RAQ045P01TCRTR-ND |
Manufacturer Part#: |
RAQ045P01TCR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 12V 4.5A TUMT6 |
More Detail: | P-Channel 12V 4.5A (Ta) 600mW (Ta) Surface Mount T... |
DataSheet: | RAQ045P01TCR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
Vgs (Max): | -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 600mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSMT6 (SC-95) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.5A, 4.5V |
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The RAQ045P01TCR is a single MOSFET transistor, which stands for metal oxide semiconductor field-effect transistor. It is an active semiconductor device which consists of a source, gate, and drain. It is fundamentally an insulated-gate field effect transistor (IGFET) that uses a metal oxide gate dielectric to allow variable conductivity between the source and the drain terminals. Its low on-state resistance and high transconductance make the RAQ045P01TCR useful for applications such as switching, voltage control and even power amplification.
The RAQ045P01TCR is commonly used in amplifier circuits for audio systems, such as car radios, home theatres and PA systems. It makes an ideal substitute for audio pre-amp circuits, as its low on-state resistance allows it to easily handle high voltages and pass large output signals. The low off-state resistance ensures that the device can be switched off easily and quickly, ensuring that the circuit remains inactive when not in use.
The RAQ045P01TCR can also be used in motor control and power management applications. Its low threshold voltage and high transconductance enables it to easily switch between states quickly and accurately, which is essential in controlling the rotations of a motor or the current flowing in a power circuit. This makes the RAQ045P01TCR useful for applications such as controlling the speed of motors, dimming displays and controlling the current in power circuits.
The working principle of the RAQ045P01TCR is based upon the charge carriers that are injected with the gate voltage. As soon as the gate voltage is high enough to overcome the threshold voltage, the current between the source and the drain starts to flow. The current between the source and the drain is regulated by the gate voltage, meaning that the voltage applied to the gate controls the output current. The device is therefore said to be voltage controlled.
The RAQ045P01TCR can also be used in a variety of digital circuits, such as logic gates and shift registers. As it can amplify signals quickly and accurately, it is an ideal candidate for such applications. Its low input impedance makes it a good candidate for driving signals through the circuit and its fast switching speed allows it to provide very accurate timing results.
In summary, the RAQ045P01TCR is a single MOSFET transistor that is useful for a range of applications, such as power control and digital circuitry. Its low on-state resistance and high transconductance make it suitable for audio pre-amps, motor controllers and power protection applications. Its working principle is based upon the charge carriers that are injected with the gate voltage and its fast switching speed makes it ideal for digital circuits.
The specific data is subject to PDF, and the above content is for reference
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