RC28F128J3F95D

Series:	StrataFlash™
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	128Mb (16M x 8, 8M x 16)
Write Cycle Time - Word, Page:	95ns
Access Time:	95ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-TBGA
Supplier Device Package:	64-EasyBGA (10x13)
Base Part Number:	28F128J3

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RC28F128J3F95D Memory Application Field and Working Principle

Introduction

The RC28F128J3F95D is a family of high density and cost-efficient Non-Volatile Memories (NVM) from Microchip. It is a non-volatile 8Mbit Flash Memory family that offers storage capacity from 1Mbit up to 8Mbit. It uses a combination of standard MLC process applications including a controller and paged architecture for easy device programming. The memory has a small footprint and low power consumption, making it an ideal choice for embedded applications.

Application Field

The RC28F128J3F95D is a versatile memory product with a wide range of applications in the industrial, medical, automotive, and consumer markets. In the industrial market, the memory can be used in any application where long-term data storage is required, such as controllers and automation systems. In the medical market, the elevated temperature tolerance and high durability of the RC28F128J3F95D make it a great choice for medical devices, including medical implants and drug delivery systems. In the automotive market, the memory is used in ECU and other automotive control systems that need non-volatile storage for long-term system data. In the consumer market, the memory is widely used for data storage in SoC, audio applications, and other electronic devices.

Working Principle

The RC28F128J3F95D uses a standard MLC process architecture with a controller and a paged memory. The memory is organized in a 6,818x128 array of bytes that can be split into a number of pages depending on the application. These pages can be individually read or programmed using the controller’s page-oriented commands. The memory pages can also be individually erased using the erase command.The controller implements error detection and correction algorithms and features a self-timed programming algorithm to ensure reliable programming of the memory cells. The controller also features several test and security features, including a Data Integrity Check (DIC) for data protection, a Page Security Check feature for verifying data, and a DFI-plus feature for improved data integrity. The memory also includes several power management features to reduce power consumption. The High Speed Byte Access (HSBA) mode provides a direct connection between the controller and the page addresses to reduce power consumption. The Sleep Mode feature allows the memory to enter a low-power state when not in use. The RC28F128J3F95D also features multiple write cycle endurance and superior write/erase performance. The memory is designed to withstand up to 1,000,000 program/erase cycles and provides reliable read/write access times. This makes the memory ideal for applications that require high endurance and write/erase performance.

Conclusion

The RC28F128J3F95D is an excellent choice for embedded applications that require long-term non-volatile storage. It has a small footprint and low power consumption, making it an ideal choice for industrial, medical, automotive, and consumer applications. The memory also features multiple write cycle endurance and superior read/write/erase performance, making it well-suited for applications that require high write/erase performance. Overall, the RC28F128J3F95D is an ideal choice for applications that need non-volatile storage for long-term system data. Its combination of a standard MLC process, power management features, and superior read/write/erase performance makes it an excellent memory product.

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