RC28F256J3C125SL7HE

Series:	StrataFlash™
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (32M x 8, 16M x 16)
Write Cycle Time - Word, Page:	125ns
Access Time:	125ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-TBGA
Supplier Device Package:	64-EasyBGA (10x13)
Base Part Number:	28F256J3

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RC28F256J3C125SL7HE is a type of memory, specifically flash memory. It is known for its longevity, low cost and wide availability. Flash memory is a type of non-volatile (will not be lost when power is removed) memory that\'s similar to SRAM, but with a longer recovery time. Flash memory is usually used for storage, but can also be used for code storage and program execution. Flash memory stores data in blocks that can be accessed and changed in a specific order. The RC28F256J3C125SL7HE is a 256Mbit (32Mbyte) memory device based on 8 devices of 8Mbit density. It is a single voltage device, meaning that it runs on both 1.65 to 1.95V and 3.0V I/O and core voltages. This makes it suitable for a wide variety of applications, including those using parallel and flash memories.In terms of application fields, the RC28F256J3C125SL7HE can be used in embedded applications such as digital cameras, digital camcorders, cellular phones, telecommunications systems, digital music players, radio and video games. It can also be used in digital video broadcast decoders, networking equipment and PC motherboards. The RC28F256J3C125SL7HE also has the capability to implement device-level functions such as chip select and write protect. This feature can be enabled through the use of dedicated pins or through the setting of configuration bits in the command register.In terms of its working principle, the RC28F256J3C125SL7HE uses a process called NAND Flash, which stands for Not And Flash. This process is used to store data onto the chip. The structure of the memory cells is such that charge is stored in a layer of oxide on top of a floating gate. When a voltage is applied, enough electric field is created to transfer electrons through the oxide, to the floating gate and the cell is programmed. The process is reversed to erase it. The RC28F256J3C125SL7HE also supports multiple types of write operations. It supports reading, writing and erasing operations, with the ability to read individual bytes and write in blocks. In addition, it supports an operation called burst read/write. This means that once you start a read/write operation, you can continue without having to send a new request every time. This eliminates the need for multiple requests and helps improve performance.The RC28F256J3C125SL7HE also supports the Open NAND Flash Interface (ONFI) 3.0. This is an industry standard for flash memory. It ensures that the device is compatible with different operating systems and host controllers. It also features support for several features which improve performance and reduce power consumption, such as error correction and wear-leveling.In conclusion, the RC28F256J3C125SL7HE is a high quality memory chip for embedded applications. It is suitable for applications where long storage times are required, such as digital cameras and video broadcast decoders. It is both a single voltage device and ONFI 3.0 compliant, providing increased compatibility and performance. It also supports read/write and erase operations, as well as burst read/write operations.

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